公开(公告)号：US20040262494A1

公开(公告)日：2004-12-30

申请号：US10873110

申请日：2004-06-23

申请人： Trecenti Technologies, Inc.

发明人： Yuichi Egawa ,  Akira Fukami

IPC分类号： H01L021/00 ,  H01L027/00 ,  H04N003/14

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/148

摘要： This invention provides a solid-state imaging device which enables its cell area to be reduced while maintaining a light receiving area. First, a plurality of isolation areas are formed in a semiconductor substrate. Then, p-type well is formed by implanting p-type impurity into the interior organization of an active area surrounded by the isolation areas. Next, by using ion implantation method, a charge accumulating area, which is a n-type semiconductor area, is formed deep in the p-type well. Consequently, photo diode is formed in a deep portion apart from the surface of the semiconductor substrate. After that, an electric transferring MIS transistor is formed above and apart from the charge accumulating area, so that the photo diode and the MIS transistor are formed in a vertical structure.

摘要翻译： 本发明提供了一种固态成像装置，其能够在保持光接收面积的同时减小其单元面积。 首先，在半导体衬底中形成多个隔离区。 然后，通过将p型杂质注入到由隔离区包围的有源区域的内部组织中形成p型阱。 接下来，通过使用离子注入法，在p型阱中深深地形成作为n型半导体区域的电荷蓄积区域。 因此，光电二极管形成在远离半导体衬底的表面的深部分中。 之后，在电荷累积区域上方形成电转移MIS晶体管，使得光电二极管和MIS晶体管形成为垂直结构。