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    High power, spectrally combined laser systems and related methods
    1.
    发明授权
    High power, spectrally combined laser systems and related methods 失效
    大功率光谱组合激光系统及相关方法

    公开(公告)号：US06697192B1

    公开(公告)日：2004-02-24

    申请号：US09708697

    申请日：2000-11-08

    申请人： Tso Yee Fan ,  Anish Goyal ,  Antonio Sanchez-Rubio

    发明人： Tso Yee Fan ,  Anish Goyal ,  Antonio Sanchez-Rubio

    IPC分类号： H01S300

    CPC分类号： H01S3/2383 ,  H01S3/0675 ,  H01S3/06754 ,  H01S3/2308 ,  H01S5/4025 ,  H01S5/50

    摘要： An external-resonator laser system having multiple laser elements is configured to permit each laser to undergo individual amplification notwithstanding optical beam combination. In this way, overall output power may be scaled in a desired fashion, depending on the selected characteristics of the optical amplifier elements. To achieve additional power, each of the amplifiers may implemented as a phased array. Viewed more generally, a phased-array configuration affords beam combining in two stages, with each contributing input source itself composed of multiple sources whose outputs have been combined. If each phased-array source emits at a different wavelength, this design offers a multi-wavelength output whose power level may be scaled in accordance with the number and character of the devices forming each phased array.

    摘要翻译： 具有多个激光元件的外部谐振器激光系统被配置成允许每个激光器经受单独的放大，尽管光束组合。 以这种方式，总体输出功率可以以期望的方式缩放，这取决于所选择的光放大器元件的特性。 为了实现额外的功率，每个放大器可以实现为相控阵列。 更一般地说，相控阵配置提供两个阶段的波束组合，每个贡献输入源本身由已经组合其输出的多个源组成。 如果每个相控阵源都以不同的波长发射，则该设计提供多波长输出，其功率电平可以根据形成每个相控阵列的器件的数量和特性进行缩放。

    GaSb-clad mid-infrared semiconductor laser
    4.
    发明授权
    GaSb-clad mid-infrared semiconductor laser 失效
    GaSb包层中红外半导体激光器

    公开(公告)号：US06813296B2

    公开(公告)日：2004-11-02

    申请号：US10132580

    申请日：2002-04-25

    申请人： Anish Goyal ,  George Turner

    发明人： Anish Goyal ,  George Turner

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/34306

    摘要： A semiconductor laser operating in the mid-infrared region is described. In one particular embodiment, the semiconductor laser is provided having first and second cladding layers consisting essentially of GaSb that surround an active core, wherein the index of refraction of the first and second cladding layers is less than but close to the index of refraction of active core. The semiconductor laser in accordance with this invention has a low divergence angle with a high power efficiency. In an alternate embodiment, the semiconductor laser is provided having first and second cladding layers consisting essentially of AlxGa1-xAsySb1-y that surround the active core with an aluminum mole fraction between 0 and 25 percent. The index of refraction of the first and second cladding layers consisting essentially of AlxGa1-xAsySb1-y can be adjusted to match a variety of types of active cores and to provide a pre-determined divergence.

    摘要翻译： 描述了在中红外区域中工作的半导体激光器。 在一个具体实施例中，半导体激光器被提供有具有主要由GaSb组成的第一和第二覆层，该GaSb围绕有源芯，其中第一和第二覆层的折射率小于但接近活动的折射率 核心。 根据本发明的半导体激光器具有低功率效率的低发散角。 在替代实施例中，提供半导体激光器，其具有基本上由Al x Ga 1-x As y Sb 1-y组成的第一和第二覆层，所述Al x Ga 1-x As y Sb 1-y围绕活性芯，铝摩尔分数为0至25％。 基本上由Al x Ga 1-x As y Sb 1-y组成的第一和第二包覆层的折射率可以被调节以匹配各种类型的活性芯并提供预定的发散。