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    LASER MODULE
    1.
    发明公开
    LASER MODULE 审中-公开

    公开(公告)号：US20240356306A1

    公开(公告)日：2024-10-24

    申请号：US18630166

    申请日：2024-04-09

    申请人： HAMAMATSU PHOTONICS K.K.

    发明人： Takahide OCHIAI ,  Atsushi SUGIYAMA ,  Tadataka Edamura

    IPC分类号： H01S5/34 ,  H01S5/02216 ,  H01S5/02253 ,  H01S5/14

    CPC分类号： H01S5/3402 ,  H01S5/02216 ,  H01S5/02253 ,  H01S5/141

    摘要： A laser module includes a QCL element, a diffraction grating portion, a first lens member configured to be disposed between the first end face and the diffraction grating portion, and a second lens member configured to be disposed at a position facing a second end face of the QCL element, and a package configured to house the QCL element, the diffraction grating portion, and the first lens member. A distance in an X-axis direction between an incident surface of the first lens member on which the first light is incident and the first end face is shorter than a distance in the X-axis direction between an incident surface of the second lens member on which the third light is incident and the second end face.

    LASER MODULE
    2.
    发明公开
    LASER MODULE 审中-公开

    公开(公告)号：US20240356301A1

    公开(公告)日：2024-10-24

    申请号：US18630238

    申请日：2024-04-09

    申请人： HAMAMATSU PHOTONICS K.K.

    发明人： Atsushi SUGIYAMA ,  Takahide Ochiai ,  Tadataka Edamura

    IPC分类号： H01S5/02253 ,  H01S5/02216 ,  H01S5/14 ,  H01S5/34

    CPC分类号： H01S5/02253 ,  H01S5/02216 ,  H01S5/141 ,  H01S5/3402

    摘要： A laser module according to an embodiment includes a QCL element, a diffraction grating portion configured to diffract and reflect first light emitted from a first end face of the QCL element and return second light to the first end face, and a first portion configured to be disposed between the first end face and the diffraction grating portion, allow the first light and the second light to pass therethrough, and collimate the first light. When viewed from a Y-axis direction, the diffraction grating portion is inclined with respect to a Z-axis direction. A position of a beam waist of the first light collimated by the first portion in an X-axis direction is located between a position of one end of the diffraction grating portion in the Z-axis direction and a position of the other end of the diffraction grating portion in the Z-axis direction.

    Laser assembly, spectrometer and method for operating a laser
    3.
    发明授权
    Laser assembly, spectrometer and method for operating a laser 有权

    公开(公告)号：US11916354B2

    公开(公告)日：2024-02-27

    申请号：US17266374

    申请日：2019-08-09

    申请人： TECHNISCHE UNIVERSITÄT WIEN

    发明人： Benedikt Schwarz ,  Johannes Hillbrand ,  Gottfried Strasser

    IPC分类号： H01S5/0625 ,  H01S5/00 ,  H01S5/065 ,  H01S5/34

    CPC分类号： H01S5/06255 ,  H01S5/0085 ,  H01S5/0657 ,  H01S5/3402 ,  H01S5/005

    摘要： A laser assembly comprising: a semiconductor laser with a fast gain medium, wherein the gain relaxation time of the gain medium is smaller than the round-trip time in a standing wave cavity; a DC source coupled to the standing wave cavity; and an AC injection device for injecting an electrical AC signal within a range and/or within an integer multiple of the range into the standing wave cavity, the range within ±1% of the natural round-trip frequency in the standing wave cavity, comprising at least a first and second electric contact section extending along a first longitudinal side of the longitudinal extension of the standing wave cavity, the AC injection device coupled to the first and/or second electric contact section such that the complex amplitude of the electrical AC signal differs for the first and second longitudinal electric contact section.

    Quantum cascade laser
    5.
    发明授权
    Quantum cascade laser 有权

    公开(公告)号：US11843224B2

    公开(公告)日：2023-12-12

    申请号：US17392305

    申请日：2021-08-03

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Takashi Kato

    IPC分类号： H01S5/34 ,  H01S5/343

    CPC分类号： H01S5/3406 ,  H01S5/3402 ,  H01S5/34313 ,  H01S5/34346

    摘要： A quantum cascade laser includes a substrate having a group III-V compound semiconductor and a core region that is provided on the substrate and that includes a group III-V compound semiconductor. The core region includes a plurality of unit structures that are stacked on top of one another. Each of the plurality of unit structures includes an active layer and an injection layer. The injection layer includes at least one strain-compensated layer including a first well layer and a first barrier layer and at least one lattice-matched layer including a second well layer and a second barrier layer. The first well layer has a lattice constant larger than a lattice constant of the substrate. The first barrier layer has a lattice constant smaller than the lattice constant of the substrate. The second well layer and the second barrier layer each have a lattice constant that is lattice-matched to the substrate.

    SEMICONDUCTOR LASER
    10.
    发明申请
    SEMICONDUCTOR LASER 审中-公开

    公开(公告)号：US20180183213A1

    公开(公告)日：2018-06-28

    申请号：US15737139

    申请日：2016-09-12

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Tsukuru KATSUYAMA ,  Takashi KATO

    IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S5/227 ,  H01S5/042

    CPC分类号： H01S5/3402 ,  H01S5/042 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/227 ,  H01S5/3401 ,  H01S5/3408 ,  H01S5/34313 ,  H01S5/34346

    摘要： A semiconductor laser operable by a reduced bias is disclosed. The semiconductor laser includes a substrate, an active area including a quantum well structure, an emitter area and a collector area, where those areas laterally extend on the substrate as the emitter and collector areas sandwich the active area therebetween. The emitter area and the collector area show the conduction type same to each other. The quantum well structure may cause the radiative transition from a higher energy band to a lower energy band, while, the emitter area has a conduction band whose level is equal to or higher than the higher energy band in the quantum well structure and the collector area in a level of the conduction band thereof is equal to or lower than the lower energy band of the quantum well structure.