公开(公告)号：US20100282948A1

公开(公告)日：2010-11-11

申请号：US12838937

申请日：2010-07-19

申请人： Tsutomu MIYAJIMA ,  Hisatada YASUKAWA

发明人： Tsutomu MIYAJIMA ,  Hisatada YASUKAWA

IPC分类号： H01L31/10 ,  H01L31/0352

CPC分类号： H01L31/107

摘要： An optical semiconductor device comprises a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type formed on the first semiconductor region. The device further comprises a third semiconductor region of the first conductivity type formed in a semiconductor layer, which is separated from the first and second semiconductor regions by an element separation region, and a fourth semiconductor region of the first conductivity type formed between a semiconductor substrate and third semiconductor region. The device further comprises a fifth semiconductor region of the first conductivity type formed across the semiconductor substrate and the first semiconductor region. An upper portion of the fifth semiconductor region penetrates into a specific depth of the first semiconductor region. Amplification of a current signal occurs when a reverse voltage is applied between the second semiconductor region and a surface portion of the third semiconductor region.

摘要翻译： 光学半导体器件包括形成在第一半导体区域上的第一导电类型的第一半导体区域和第二导电类型的第二半导体区域。 该器件还包括形成在半导体层中的第一半导体区域，该半导体层通过元件分离区域与第一和第二半导体区域分开，并且第一导电类型的第四半导体区域形成在半导体衬底 和第三半导体区域。 该器件还包括跨越半导体衬底和第一半导体区域形成的第一导电类型的第五半导体区域。 第五半导体区域的上部穿透第一半导体区域的特定深度。 当在第二半导体区域和第三半导体区域的表面部分之间施加反向电压时，发生电流信号的放大。