公开(公告)号：US20050189546A1

公开(公告)日：2005-09-01

申请号：US11059500

申请日：2005-02-17

申请人： Hisatada Yasukawa ,  Ryouichi Ito ,  Takaki Iwai ,  Masaki Taniguchi ,  Yasushi Jin

发明人： Hisatada Yasukawa ,  Ryouichi Ito ,  Takaki Iwai ,  Masaki Taniguchi ,  Yasushi Jin

IPC分类号： H01L27/144 ,  H01L27/15 ,  H01L31/0288 ,  H01L31/103

CPC分类号： H01L27/1443 ,  H01L31/0288 ,  H01L31/103 ,  Y02E10/50

摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.

摘要翻译： 一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。 第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。 第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。 的第三个地区。

公开(公告)号：US07768090B2

公开(公告)日：2010-08-03

申请号：US11968357

申请日：2008-01-02

申请人： Hisatada Yasukawa

发明人： Hisatada Yasukawa

IPC分类号： H01L31/062

CPC分类号： H01L31/101 ,  H01L27/1443

摘要： A semiconductor photodetector device includes a light receiving operation section converting incident light to an electric signal and a current amplifying operation section amplifying the electric signal. The light receiving operation section includes: a first conductivity type semiconductor layer a formed on a first conductivity type semiconductor substrate; a second conductivity type first semiconductor region formed on the semiconductor layer; and a first conductivity type second semiconductor region formed on the semiconductor layer and separated from the first semiconductor region. The current amplifying operation section includes: the second semiconductor region; a second conductivity type third semiconductor region formed in the semiconductor substrate; a second conductivity type fourth semiconductor region formed on the third semiconductor region and separated from the second semiconductor region.

摘要翻译： 半导体光检测器件包括将入射光转换成电信号的光接收操作部分和放大电信号的电流放大操作部分。 光接收操作部分包括：形成在第一导电类型半导体衬底上的第一导电类型半导体层a; 形成在所述半导体层上的第二导电型第一半导体区域; 以及形成在半导体层上并与第一半导体区分离的第一导电型第二半导体区域。 电流放大操作部分包括：第二半导体区域; 形成在半导体衬底中的第二导电类型的第三半导体区域; 形成在第三半导体区域上并与第二半导体区域分离的第二导电型第四半导体区域。

公开(公告)号：US20090230498A1

公开(公告)日：2009-09-17

申请号：US12397765

申请日：2009-03-04

申请人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

发明人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

IPC分类号： H01L31/103

CPC分类号： H01L31/10 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/103

摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.

摘要翻译： 光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。 光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

公开(公告)号：US20090032896A1

公开(公告)日：2009-02-05

申请号：US12173429

申请日：2008-07-15

申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai

发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai

IPC分类号： H01L31/11

CPC分类号： H01L31/1105 ,  G11B7/13

摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.

摘要翻译： 光学半导体器件包括用于接收入射光的光电晶体管。 光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。 发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

公开(公告)号：US20100282948A1

公开(公告)日：2010-11-11

申请号：US12838937

申请日：2010-07-19

申请人： Tsutomu MIYAJIMA ,  Hisatada YASUKAWA

发明人： Tsutomu MIYAJIMA ,  Hisatada YASUKAWA

IPC分类号： H01L31/10 ,  H01L31/0352

CPC分类号： H01L31/107

摘要： An optical semiconductor device comprises a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type formed on the first semiconductor region. The device further comprises a third semiconductor region of the first conductivity type formed in a semiconductor layer, which is separated from the first and second semiconductor regions by an element separation region, and a fourth semiconductor region of the first conductivity type formed between a semiconductor substrate and third semiconductor region. The device further comprises a fifth semiconductor region of the first conductivity type formed across the semiconductor substrate and the first semiconductor region. An upper portion of the fifth semiconductor region penetrates into a specific depth of the first semiconductor region. Amplification of a current signal occurs when a reverse voltage is applied between the second semiconductor region and a surface portion of the third semiconductor region.

摘要翻译： 光学半导体器件包括形成在第一半导体区域上的第一导电类型的第一半导体区域和第二导电类型的第二半导体区域。 该器件还包括形成在半导体层中的第一半导体区域，该半导体层通过元件分离区域与第一和第二半导体区域分开，并且第一导电类型的第四半导体区域形成在半导体衬底 和第三半导体区域。 该器件还包括跨越半导体衬底和第一半导体区域形成的第一导电类型的第五半导体区域。 第五半导体区域的上部穿透第一半导体区域的特定深度。 当在第二半导体区域和第三半导体区域的表面部分之间施加反向电压时，发生电流信号的放大。

公开(公告)号：US07605049B2

公开(公告)日：2009-10-20

申请号：US11149258

申请日：2005-06-10

申请人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

发明人： Masaki Taniguchi ,  Hisatada Yasukawa ,  Takaki Iwai ,  Ryoichi Ito

IPC分类号： H01L21/76 ,  H01L21/311 ,  G02B6/36

CPC分类号： H01L31/02165 ,  H01L27/14685

摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.

摘要翻译： 形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是 形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜 在防反射膜上以及在微反射镜上方的周边周围的膜。

公开(公告)号：US07538404B2

公开(公告)日：2009-05-26

申请号：US11489577

申请日：2006-07-20

申请人： Tsutomu Miyajima ,  Takaki Iwai ,  Hisatada Yasukawa

发明人： Tsutomu Miyajima ,  Takaki Iwai ,  Hisatada Yasukawa

IPC分类号： H01L31/058

CPC分类号： H01L31/02165 ,  H01L27/1462

摘要： An optical semiconductor device includes a first light receiving region and a second light receiving region provided on a substrate and the first and second light receiving regions include light receiving elements, respectively. A first anti-reflection film is formed in the first light receiving region of the substrate and a second anti-reflection film is formed in the second light receiving region of the substrate. The reflectance of the first anti-reflection film for a first wavelength range of light is lower than the reflectance of the second anti-reflection film for the first wavelength range of light and the reflectance of the second anti-reflection film for a second wavelength range of light which is different from the first wavelength range of light is lower than the reflectance of the first anti-reflection film for the second wavelength range of light.

摘要翻译： 光学半导体器件包括第一光接收区域和设置在衬底上的第二光接收区域，并且第一和第二光接收区域分别包括光接收元件。 第一防反射膜形成在基板的第一光接收区域中，并且第二防反射膜形成在基板的第二光接收区域中。 用于第一波长范围的第一抗反射膜的反射率低于第一波长范围的第二防反射膜的反射率和第二波长范围的第二防反射膜的反射率 与第一波长范围的光不同的光低于第二波长范围的第一防反射膜的反射率。

公开(公告)号：US07470886B2

公开(公告)日：2008-12-30

申请号：US11328139

申请日：2006-01-10

申请人： Yuzo Shimizu ,  Hisatada Yasukawa ,  Shinichi Hamaguchi ,  Kenji Imaizumi ,  Shinichi Miyamoto ,  Yosuke Kuroiwa

发明人： Yuzo Shimizu ,  Hisatada Yasukawa ,  Shinichi Hamaguchi ,  Kenji Imaizumi ,  Shinichi Miyamoto ,  Yosuke Kuroiwa

IPC分类号： H03F3/08

CPC分类号： H01S5/0264 ,  H01S5/0683

摘要： There is provided a light receiving circuit capable of preventing an output variation of the light receiving circuit due to a change in ambient temperature with a simple configuration.The light receiving circuit is provided with a photodiode 4 for LD power monitoring and an I-V amplifier 5 connected with a feedback resistor 13, wherein a light receiving section 16 of the photodiode 4 is covered with a protective film 19. Temperature dependences between a light transmittance of the protective film 19 in accordance-with a shift of a wavelength of a laser beam due to a change in ambient temperature, and a resistance value of the feedback resistor 13 are set in such a way that they may be mutually compensated and an output voltage from the light receiving circuit may be constant for a temperature change.

摘要翻译： 提供了一种能够以简单的结构防止由于环境温度的变化而导致的光接收电路的输出变化的光接收电路。 光接收电路设置有用于LD功率监测的光电二极管4和与反馈电阻13连接的IV放大器5，其中光电二极管4的光接收部分16被保护膜19覆盖。光透射率 根据环境温度变化引起的激光束的波长偏移和反馈电阻器13的电阻值的设定，使得它们可以相互补偿并输出 来自光接收电路的电压对于温度变化可以是恒定的。

公开(公告)号：US20070023770A1

公开(公告)日：2007-02-01

申请号：US11489577

申请日：2006-07-20

申请人： Tsutomu Miyajima ,  Takaki Iwai ,  Hisatada Yasukawa

发明人： Tsutomu Miyajima ,  Takaki Iwai ,  Hisatada Yasukawa

IPC分类号： H01L33/00 ,  H01L29/18 ,  H01L31/00 ,  H01L31/0232

CPC分类号： H01L31/02165 ,  H01L27/1462

摘要： An optical semiconductor device includes a first light receiving region and a second light receiving region provided on a substrate and the first and second light receiving regions include light receiving elements, respectively. A first anti-reflection film is formed in the first light receiving region of the substrate and a second anti-reflection film is formed in the second light receiving region of the substrate. The reflectance of the first anti-reflection film for a first wavelength range of light is lower than the reflectance of the second anti-reflection film for the first wavelength range of light and the reflectance of the second anti-reflection film for a second wavelength range of light which is different from the first wavelength range of light is lower than the reflectance of the first anti-reflection film for the second wavelength range of light.

摘要翻译： 光学半导体器件包括第一光接收区域和设置在衬底上的第二光接收区域，并且第一和第二光接收区域分别包括光接收元件。 第一防反射膜形成在基板的第一光接收区域中，并且第二防反射膜形成在基板的第二光接收区域中。 用于第一波长范围的第一抗反射膜的反射率低于第一波长范围的第二防反射膜的反射率和第二波长范围的第二防反射膜的反射率 与第一波长范围的光不同的光低于第二波长范围的第一防反射膜的反射率。

公开(公告)号：US20060233207A1

公开(公告)日：2006-10-19

申请号：US11328139

申请日：2006-01-10

申请人： Yuzo Shimizu ,  Hisatada Yasukawa ,  Shinichi Hamaguchi ,  Kenji Imaizumi ,  Shinichi Miyamoto ,  Yosuke Kuroiwa

发明人： Yuzo Shimizu ,  Hisatada Yasukawa ,  Shinichi Hamaguchi ,  Kenji Imaizumi ,  Shinichi Miyamoto ,  Yosuke Kuroiwa

IPC分类号： H01S3/13

CPC分类号： H01S5/0264 ,  H01S5/0683

摘要： There is provided a light receiving circuit capable of preventing an output variation of the light receiving circuit due to a change in ambient temperature with a simple configuration. The light receiving circuit is provided with a photodiode 4 for LD power monitoring and an I-V amplifier 5 connected with a feedback resistor 13, wherein a light receiving section 16 of the photodiode 4 is covered with a protective film 19. Temperature dependences between a light transmittance of the protective film 19 in accordance-with a shift of a wavelength of a laser beam due to a change in ambient temperature, and a resistance value of the feedback resistor 13 are set in such a way that they may be mutually compensated and an output voltage from the light receiving circuit may be constant for a temperature change.

摘要翻译： 提供了一种能够以简单的结构防止由于环境温度的变化而导致的光接收电路的输出变化的光接收电路。 光接收电路设置有用于LD功率监测的光电二极管4和与反馈电阻13连接的I-V放大器5，其中光电二极管4的光接收部分16被保护膜19覆盖。 根据环境温度变化引起的激光束的波长偏移和反馈电阻13的电阻值，保护膜19的透光率之间的温度依赖性被设定为使得它们可以 相互补偿，并且来自光接收电路的输出电压对于温度变化可以是恒定的。