公开(公告)号：US5149362A

公开(公告)日：1992-09-22

申请号：US386264

申请日：1989-07-28

申请人： Tsutomu Okutomi ,  Atsushi Yamamoto ,  Seishi Chiba ,  Tsuneyo Seki ,  Mikio Okawa ,  Mitsutaka Honma ,  Kiyofumi Otobe ,  Yoshinari Satoh ,  Tadaaki Sekiguchi

发明人： Tsutomu Okutomi ,  Atsushi Yamamoto ,  Seishi Chiba ,  Tsuneyo Seki ,  Mikio Okawa ,  Mitsutaka Honma ,  Kiyofumi Otobe ,  Yoshinari Satoh ,  Tadaaki Sekiguchi

IPC分类号： H01H33/66 ,  H01H1/02 ,  H01H1/0233

CPC分类号： H01H1/0203 ,  H01H1/0233 ,  Y10T428/12049

摘要： An Ag-Cu-WC contact forming material for a vacuum interrupter comprising a highly conductive component comprising Ag and Cu and an arc-proof component comprising WC wherein the content of the highly conductive component is such that the total amount of Ag and Cu(Ag+Cu) is from 25% to 65% by weight and the percentage of Ag based on the total amount of Ag and Cu[Ag/(Ag+Cu)] is from 40% to 80% by weight; wherein the content of the arc-proof component is from 35% to 75% by weight; wherein the structure of the highly conductive component comprises a matrix and a discontinuous phase, the discontinuous phase having a thickness or width of no more than 5 micrometers and wherein said arc-proof component comprises a discontinuous grain having a grain size of no more than 1 micrometer.

公开(公告)号：US5045281A

公开(公告)日：1991-09-03

申请号：US486259

申请日：1990-02-27

申请人： Tsutomu Okutomi ,  Mikio Okawa ,  Atsushi Yamamoto ,  Tsuneyo Seki ,  Yoshinari Satoh ,  Mitsutaka Honma ,  Seishi Chiba ,  Tadaaki Sekiguchi

发明人： Tsutomu Okutomi ,  Mikio Okawa ,  Atsushi Yamamoto ,  Tsuneyo Seki ,  Yoshinari Satoh ,  Mitsutaka Honma ,  Seishi Chiba ,  Tadaaki Sekiguchi

IPC分类号： C22C5/08 ,  C22C1/04 ,  C22C14/00 ,  C22C16/00 ,  C22C27/02 ,  C22C27/04 ,  C22C27/06 ,  C22C29/08 ,  C22C29/14 ,  H01H1/02 ,  H01H1/0233 ,  H01H33/66

CPC分类号： H01H1/0203 ,  H01H1/0233

摘要： A contact forming material for a vacuum interrupter comprising: from 25% to 65% by weight of a highly conductive component comprising Ag and Cu, and from 35% to 75% by weight of an arc-proof component selected from the group consisting of Ti, V, Cr, Zr, Mo, W and their carbides and borides, and mixtures thereof wherein the highly conductive component of the contact forming material comprises (i) a first highly conductive component region composed of a first discontinuous phase having a thickness or width of no more than 5 micrometers and a first matrix surrounding the first discontinuous phase, and (ii) a second highly conductive component region composed of a second discontinuous phase having a thickness or width of at least 5 micrometers and a second matrix surrounding the second discontinuous phase, wherein the first discontinuous phase in the first highly conductive component region is finely and uniformly dispersed in the first matrix at intervals of no more than 5 micrometers, and wherein the amount of the second highly conductive component region based on the total highly conductive component is within the range of from 10% to 60% by weight.