公开(公告)号：US20180120483A1

公开(公告)日：2018-05-03

申请号：US15572982

申请日：2016-05-12

申请人： Tsutomu SHIMURA ,  Egarim Corporation Japan ,  Okamoto Glass Co., Ltd.

发明人： Tsutomu Shimura ,  Hideyoshi Horimai ,  Toshihiro Kasezawa ,  Hiroshi Tabuchi

IPC分类号： G02B5/18 ,  G02B5/32 ,  H01L31/054 ,  E06B3/67 ,  G02B27/14

CPC分类号： G02B5/18 ,  E06B3/6715 ,  F24S10/40 ,  F24S20/63 ,  G02B5/32 ,  G02B19/0019 ,  G02B19/0076 ,  G02B27/144 ,  H01L31/054 ,  Y02E10/52

摘要： To provide a photovoltaic device and a light condensing device having a high condensing rate which can be manufactured easily and at low cost. This light condensing device is provided with: a light-guiding subtract for causing light to propagate between a rear-side surface and a front-side surface for receiving light from a light source; a reflective layer for light guiding, in which a reflection-type hologram is formed for reflecting light incident at a first incidence angle less than the critical angle of the light-guiding substrate at a reflection angle greater than the critical angle, the reflective layer being provided to the rear-side surface; and an emission window for causing light incident at a second incidence angle equal to or greater than the critical angle to be emitted from the light-guiding substrate, the emission window being provided to the front-side surface and/or the rear-side surface.

公开(公告)号：US20110275179A1

公开(公告)日：2011-11-10

申请号：US13144581

申请日：2010-07-26

申请人： Tomohiro Oomure ,  Keisuke Watanabe ,  Masakazu Morimoto ,  Masayoshi Natsume ,  Tsutomu Shimura ,  Tsuyoshi Habu ,  Masayuki Yamamoto

发明人： Tomohiro Oomure ,  Keisuke Watanabe ,  Masakazu Morimoto ,  Masayoshi Natsume ,  Tsutomu Shimura ,  Tsuyoshi Habu ,  Masayuki Yamamoto

IPC分类号： H01L21/56 ,  C09J7/02

CPC分类号： H01L21/67132 ,  Y10T428/2848

摘要： Provided is an improved method of joining a protective tape having one object to suppress generation of bending of a semiconductor wafer after a back-grinding process. The protective tape is supplied toward the semiconductor wafer suction-held on a chuck table, and an intermediate sheet is supplied along an upper side of the protective tape. Then, the intermediate sheet is interposed between a joining member and the protective tape along a surface of a base material in the protective tape so as to be movable. Under this state, the joining member and the semiconductor wafer move relative to each other in a horizontal direction, whereby the protective tape is joined to a surface of the semiconductor wafer.

摘要翻译： 提供了一种改进的方法，其连接具有一个物体的保护带，以在后磨削过程之后抑制半导体晶片的弯曲产生。 将保护带供给到被夹持在卡盘台上的半导体晶片，沿着保护带的上侧供给中间片。 然后，中间片沿着保护带中的基材的表面介于接合构件和保护带之间，以便可移动。 在该状态下，接合部件和半导体晶片在水平方向上相对移动，由此将保护带接合到半导体晶片的表面。

公开(公告)号：US20120171444A1

公开(公告)日：2012-07-05

申请号：US13383703

申请日：2010-07-09

申请人： Hiromoto Haruta ,  Masato Yamagata ,  Kenjiro Niimi ,  Natsuki Ukei ,  Junko Nakano ,  Tsutomu Shimura ,  Hironobu Machinaga

发明人： Hiromoto Haruta ,  Masato Yamagata ,  Kenjiro Niimi ,  Natsuki Ukei ,  Junko Nakano ,  Tsutomu Shimura ,  Hironobu Machinaga

IPC分类号： B32B7/02 ,  B32B27/06 ,  C09J7/02

CPC分类号： B32B27/08 ,  C08G2261/3221 ,  C08G2261/3223 ,  C09J7/29 ,  C09J2201/622 ,  C09J2203/318 ,  C09J2467/006 ,  G02B1/105 ,  G02B1/14 ,  G02B1/16 ,  Y10T428/24983 ,  Y10T428/265

摘要： A transparent film whose back-face has excellent resistance to scratch, and a surface protection film having the transparent film are provided. A transparent film has a substrate layer formed of a transparent resin material, and a back-face layer with a thickness of 1 μm or less provided on a first face thereof. In a scratch test of the transparent film, the failure initiation load of the back-face layer is 50 mN or greater and the friction coefficient of the back-face layer is 0.4 or less.

摘要翻译： 提供其背面具有优异的耐划伤性的透明膜，以及具有透明膜的表面保护膜。 透明膜具有由透明树脂材料形成的基板层和设置在其第一面上的厚度为1μm以下的背面层。 在透明膜的划痕试验中，背面层的破坏引发载荷为50mN以上，背面层的摩擦系数为0.4以下。