摘要:
A magnetic recording medium is provided with a structured nucleation layer. The structured nucleation layer comprises a fine-grained seed layer and an intermediate layer. The seed layer (e.g., NiAl, Ti, Cr--Cu, etc.) serves as a template for fine grained-growth of the intermediate layer. The intermediate (e.g., Cr, etc.) layer has preferred crystal textures and an appropriate lattice match to a subsequently deposited magnetic recording layer to allow epitaxial growth of the magnetic recording layer. The intermediate layer provides morphology and orientation to the magnetic recording layer. The magnetic recording layer (e.g., Co-alloy) includes a material which segregates to the alloy grain boundaries to isolate the grains thereof. Each grain of the magnetic recording layer is predominantly a single crystal of small size and uniformly spaced from adjacent grains. The easy axis of the magnetic recording material is predominantly in the plane of the disk, with a random in-plane orientation. Superior magnetic properties are obtained.
摘要:
A magnetic recording medium comprising a non-ferromagnetic substrate and a magnetic recording layer formed on the substrate with an underlayer of Cr or a Cr alloy interposed therebetween, which has a seed layer between the substrate and the underlayer, wherein said seed layer is made of a material which contains at least 30 ppm of oxygen and which has a B2 crystal structure.
摘要:
A method for forming an optical thin film having multiple optical layers on the surface of a substrate using a magnetron sputtering apparatus with a sputtering chamber having cathodes, the substrate, and at least two kinds of targets disposed therein. An inert gas and a reactive gas are introduced into the sputtering chamber to form at least some of the multiple optical layers on the substrate by successively alternately repeatedly forming at least two kinds of optical layers each having a different optical constant by means of the reactive magnetron sputtering apparatus under a condition of a discharge pressure being no greater than 1.3×10−1 Pa.