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1.发明授权Magnetic alloy having a structured nucleation layer and method for manufacturing same 失效具有结构化成核层的磁性合金及其制造方法
公开(公告)号：US5846648A
公开(公告)日：1998-12-08
申请号：US802646
申请日：1997-02-18
申请人： Tu Chen , Michinobu Suekane , Makoto Imakawa , Kazuhiko Mitarai
发明人： Tu Chen , Michinobu Suekane , Makoto Imakawa , Kazuhiko Mitarai
IPC分类号： C23C14/06 , C23C14/50 , C23C14/56 , G11B5/64 , G11B5/73 , G11B5/851 , H01F10/00 , H01F41/18 , H01F41/30 , G11B5/66
CPC分类号： B82Y25/00 , B82Y40/00 , C23C14/06 , C23C14/50 , C23C14/568 , G11B5/656 , G11B5/732 , G11B5/7325 , G11B5/851 , H01F10/007 , H01F10/265 , H01F41/18 , H01F41/301 , Y10S428/90 , Y10T428/12736 , Y10T428/12819 , Y10T428/12847 , Y10T428/12861 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： A magnetic recording medium is provided with a structured nucleation layer. The structured nucleation layer comprises a fine-grained seed layer and an intermediate layer. The seed layer (e.g., NiAl, Ti, Cr--Cu, etc.) serves as a template for fine grained-growth of the intermediate layer. The intermediate (e.g., Cr, etc.) layer has preferred crystal textures and an appropriate lattice match to a subsequently deposited magnetic recording layer to allow epitaxial growth of the magnetic recording layer. The intermediate layer provides morphology and orientation to the magnetic recording layer. The magnetic recording layer (e.g., Co-alloy) includes a material which segregates to the alloy grain boundaries to isolate the grains thereof. Each grain of the magnetic recording layer is predominantly a single crystal of small size and uniformly spaced from adjacent grains. The easy axis of the magnetic recording material is predominantly in the plane of the disk, with a random in-plane orientation. Superior magnetic properties are obtained.
摘要翻译： 磁记录介质具有结构化成核层。 结构化成核层包括细粒种子层和中间层。 种子层（例如，NiAl，Ti，Cr-Cu等）用作中间层的细粒生长的模板。 中间体（例如，Cr等）层具有优选的晶体结构，并且与随后沉积的磁记录层具有适当的晶格匹配，以允许磁记录层的外延生长。 中间层为磁记录层提供形态和取向。 磁记录层（例如Co合金）包括分离到合金晶界以分离其晶粒的材料。 磁记录层的每个颗粒主要是小尺寸的单晶并且与相邻晶粒均匀间隔开。 磁记录材料的容易轴主要位于盘的平面中，具有随机的面内取向。 获得了优异的磁性能。
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公开(公告)号：US06309765B1
公开(公告)日：2001-10-30
申请号：US09262006
申请日：1999-03-04
IPC分类号： G11B566
CPC分类号： G11B5/66 , Y10S428/90
摘要： A magnetic recording medium comprising a non-ferromagnetic substrate and a magnetic recording layer formed on the substrate with an underlayer of Cr or a Cr alloy interposed therebetween, which has a seed layer between the substrate and the underlayer, wherein said seed layer is made of a material which contains at least 30 ppm of oxygen and which has a B2 crystal structure.
摘要翻译： 一种磁记录介质，包括非铁磁性基板和磁记录层，所述磁记录层在基板上形成有Cr或Cr合金基底，其间具有在基板和底层之间的种子层，其中所述种子层由 含有至少30ppm氧并具有B2晶体结构的材料。
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3.发明授权公开(公告)号：US06500567B1
公开(公告)日：2002-12-31
申请号：US09677644
申请日：2000-10-03
申请人： Gerardo Bertero , Charles Changqing Chen , Tu Chen , Tsutomu Yamashita , Makoto Imakawa , Michinobu Suekane
发明人： Gerardo Bertero , Charles Changqing Chen , Tu Chen , Tsutomu Yamashita , Makoto Imakawa , Michinobu Suekane
IPC分类号： G11B566
CPC分类号： G11B5/7325 , G11B5/8404 , Y10S428/90 , Y10T428/12854 , Y10T428/26 , Y10T428/265
摘要： In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD. The perfection of the grains is very high so that high anisotropy is obtained in the magnetic layer, resulting in high Hc without the necessity of addition of high level of Pt. The high degree of crystalline perfection also contributes to low TNLD.
摘要翻译： 在本发明中，CoCr合金成核层的超薄层以高于主要（200）取向的Cr膜的极低的沉积速率溅射，接着以较高的速率和中等温度的CoCrPt基合金溅射膜溅射。 该结构产生了具有非常高的Hc，优良的PW50，低噪音和优异的低TNLD值的介质。 通过使用该技术，CoCrPt磁性膜实现了优异的面内晶体取向，并且以最小量的Pt添加到磁性膜来实现高Hc。 该方法允许形成钴的非常细的晶粒结构，这有助于良好的信噪比。 晶粒结构与晶粒间的铬分离结合，提高了信噪比。 在钴层中实现高度的面内c轴取向，其提供非常高的磁滞回线矩形度，这有助于改善OW和TNLD。 晶粒的完整性非常高，从而在磁性层中获得高各向异性，导致高Hc，而不需要添加高水平的Pt。 高度的结晶完善也有助于TNLD的低下。
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4.发明授权
公开(公告)号：US6150015A
公开(公告)日：2000-11-21
申请号：US984753
申请日：1997-12-04
申请人： Gerardo Bertero , Charles Changqing Chen , Tu Chen , Tsutomu Yamashita , Makoto Imakawa , Michinobu Suekane
发明人： Gerardo Bertero , Charles Changqing Chen , Tu Chen , Tsutomu Yamashita , Makoto Imakawa , Michinobu Suekane
CPC分类号： G11B5/7325 , G11B5/8404 , Y10S428/90 , Y10T428/12854 , Y10T428/26 , Y10T428/265
摘要： In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD. The perfection of the grains is very high so that high anisotropy is obtained in the magnetic layer, resulting in high Hc without the necessity of addition of high level of Pt. The high degree of crystalline perfection also contributes to low TNLD.
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公开(公告)号：US07166374B2
公开(公告)日：2007-01-23
申请号：US10808089
申请日：2004-03-23
CPC分类号： G11B5/66 , Y10S428/90 , Y10T428/12854 , Y10T428/12861 , Y10T428/26 , Y10T428/265
摘要： A magnetic recording medium comprising a non-ferromagnetic substrate and a magnetic recording film formed on the substrate with an underlayer interposed therebetween, wherein the magnetic recording film comprises a plurality of magnetic layers and an interlayer made of a material having a B2 crystal structure or an interlayer made of Ru, disposed between the adjacent magnetic layers.
摘要翻译： 一种磁记录介质，包括非铁磁性基板和形成在基板上的磁记录膜，其中介于其间的底层，其中磁记录膜包括多个磁性层和由具有B2晶体结构或 由Ru构成的中间层，设置在相邻的磁性层之间。
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公开(公告)号：US06743528B2
公开(公告)日：2004-06-01
申请号：US09895679
申请日：2001-06-29
IPC分类号： G11B566
CPC分类号： G11B5/66 , Y10S428/90 , Y10T428/12854 , Y10T428/12861 , Y10T428/26 , Y10T428/265
摘要： A magnetic recording medium comprising a non-ferromagnetic substrate and a magnetic recording film formed on the substrate with an underlayer interposed therebetween, wherein the magnetic recording film comprises a plurality of magnetic layers and an interlayer made of a material having a B2 crystal structure or an interlayer made of Ru, disposed between the adjacent magnetic layers.
摘要翻译： 一种磁记录介质，包括非铁磁性基板和形成在基板上的磁记录膜，其中介于其间的底层，其中磁记录膜包括多个磁性层和由具有B2晶体结构或 由Ru构成的中间层，设置在相邻的磁性层之间。
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公开(公告)号：US06261681B1
公开(公告)日：2001-07-17
申请号：US09265597
申请日：1999-03-10
IPC分类号： G11B566
CPC分类号： G11B5/66 , Y10S428/90 , Y10T428/12854 , Y10T428/12861 , Y10T428/26 , Y10T428/265
摘要： A magnetic recording medium comprising a non-ferromagnetic substrate and a magnetic recording film formed on the substrate with an underlayer interposed therebetween, wherein the magnetic recording film comprises a plurality of magnetic layers and an interlayer made of a material having a B2 crystal structure or an interlayer made of Ru, disposed between the adjacent magnetic layers.
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