公开(公告)号：US20080245479A1

公开(公告)日：2008-10-09

申请号：US11695629

申请日：2007-04-03

申请人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

发明人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

IPC分类号： H01L21/306

CPC分类号： H01J37/32642 ,  H01J37/32091

摘要： An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

摘要翻译： 蚀刻系统。 蚀刻室包括排气口。 气体输入管连接到蚀刻室，输入蚀刻处理气体。 顶部RF电极设置在蚀刻室上方。 底部RF电极设置在蚀刻室下方并与顶部RF电极相对。 通过顶部和底部RF电极的操作将蚀刻工艺气体转变成等离子体。 排气泵连接到排气口，从蚀刻室排出等离子体。 基底设置在蚀刻室中。 焦点环设置在基座上，容纳晶片。 晶片被等离子体蚀刻。 路障设置在聚焦环上，对应于排气口，调节流经晶片的等离子体。

公开(公告)号：US08016975B2

公开(公告)日：2011-09-13

申请号：US12859541

申请日：2010-08-19

申请人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

发明人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01J37/32642 ,  H01J37/32091

摘要： An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

摘要翻译： 蚀刻系统。 蚀刻室包括排气口。 气体输入管连接到蚀刻室，输入蚀刻处理气体。 顶部RF电极设置在蚀刻室上方。 底部RF电极设置在蚀刻室下方并与顶部RF电极相对。 通过顶部和底部RF电极的操作将蚀刻工艺气体转变成等离子体。 排气泵连接到排气口，从蚀刻室排出等离子体。 基底设置在蚀刻室中。 焦点环设置在基座上，容纳晶片。 晶片被等离子体蚀刻。 路障设置在聚焦环上，对应于排气口，调节流经晶片的等离子体。

公开(公告)号：US07803246B2

公开(公告)日：2010-09-28

申请号：US11695629

申请日：2007-04-03

申请人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

发明人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01J37/32642 ,  H01J37/32091

摘要： An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

摘要翻译： 蚀刻系统。 蚀刻室包括排气口。 气体输入管连接到蚀刻室，输入蚀刻处理气体。 顶部RF电极设置在蚀刻室上方。 底部RF电极设置在蚀刻室下方并与顶部RF电极相对。 通过顶部和底部RF电极的操作将蚀刻工艺气体转变成等离子体。 排气泵连接到排气口，从蚀刻室排出等离子体。 基底设置在蚀刻室中。 焦点环设置在基座上，容纳晶片。 晶片被等离子体蚀刻。 路障设置在聚焦环上，对应于排气口，调节流经晶片的等离子体。

公开(公告)号：US20100314047A1

公开(公告)日：2010-12-16

申请号：US12859541

申请日：2010-08-19

申请人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

发明人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

IPC分类号： C23F1/08

CPC分类号： H01J37/32642 ,  H01J37/32091

摘要： An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

摘要翻译： 蚀刻系统。 蚀刻室包括排气口。 气体输入管连接到蚀刻室，输入蚀刻处理气体。 顶部RF电极设置在蚀刻室上方。 底部RF电极设置在蚀刻室下方并与顶部RF电极相对。 通过顶部和底部RF电极的操作将蚀刻工艺气体转变成等离子体。 排气泵连接到排气口，从蚀刻室排出等离子体。 基底设置在蚀刻室中。 焦点环设置在基座上，容纳晶片。 晶片被等离子体蚀刻。 路障设置在聚焦环上，对应于排气口，调节流经晶片的等离子体。