ADVANCED GATE DRIVERS FOR SILICON CARBIDE BIPOLAR JUNCTION TRANSISTORS

    公开(公告)号:US20220085804A1

    公开(公告)日:2022-03-17

    申请号:US17536058

    申请日:2021-11-28

    Abstract: A gate driver circuit comprises a sensor, an amplifier, a regulator, and a gate driver. The sensor is configured to sense a collector-emitter voltage and includes a first resistor and a second resistor connected in series, a high voltage diode connected between the series connected first and second resistors and a first capacitor connected parallel to the second resistor. The amplifier is configured to amplify a sensor output voltage and includes a non-inverting operational amplifier controlled by means of a plurality of resistors, a voltage follower connected to an output terminal of the non-inverting operational amplifier through a first diode and a third resistor connected across the first diode and the voltage follower. The regulator is configured to regulate a regulator output voltage based on an amplifier voltage. The gate driver is configured to connect/disconnect the regulator output voltage to the base terminal of the BJT.

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