公开(公告)号：US4238274A

公开(公告)日：1980-12-09

申请号：US925146

申请日：1978-07-17

申请人： Tze Y. Chu ,  Yogesh Jaluria ,  Robert J. Lavigna ,  Raymond E. Reusser ,  George Williams

发明人： Tze Y. Chu ,  Yogesh Jaluria ,  Robert J. Lavigna ,  Raymond E. Reusser ,  George Williams

IPC分类号： C30B15/00 ,  C30B15/10 ,  C30B15/14 ,  C30B5/00

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1068

摘要： In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide, which sometimes form on the surface of the melt-containing crucible just above the surface of the melt, are avoided by perturbing the formation conditions at the region of probable formation. Such perturbations may include increasing the temperature of the crucible at the region of probable formation. The increase in temperature may be provided by including an aperture in the housing which surrounds and supports the crucible to enable locally greater radiative heating of the crucible in the region of probable formation. Other expedients for locally increasing the temperature of the crucible include, without limitation, selective frosting and other techniques for locally changing the emissivity characteristics of the crucible and/or the surrounding material.

摘要翻译： 在Czochralski晶体生长操作中，特别是涉及硅晶体生长的那些，有时在熔融物表面上形成熔融物坩埚的表面上有时会形成一氧化硅的突出形成，这是通过扰乱该区域的形成条件来避免的 可能形成。 这种扰动可以包括在可能的形成区域增加坩埚的温度。 温度的升高可以通过在壳体中包括一个孔来提供，该孔围绕并支撑坩埚，以便在可能形成的区域中局部地更大程度地对坩埚进行辐射加热。 用于局部增加坩埚温度的其它方法包括但不限于选择性结霜和用于局部改变坩埚和/或周围材料的发射率特性的其它技术。