公开(公告)号：US20080079030A1

公开(公告)日：2008-04-03

申请号：US11537265

申请日：2006-09-29

申请人： Tzu-Hsuan HSU ,  Dun-Nian YAUNG

发明人： Tzu-Hsuan HSU ,  Dun-Nian YAUNG

IPC分类号： H01L27/148

CPC分类号： H01L27/14645 ,  H01L27/1464

摘要： A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.

摘要翻译： 提供制造背面照明传感器的方法。 提供衬底并且在衬底上执行高能离子注入以注入第一掺杂区域。 在衬底上形成层，并在衬底上执行自对准高能离子注入，以在第一掺杂区域上注入第二掺杂区域。 第一和第二掺杂区域的组合厚度大于衬底的厚度的50％，并且衬底的背表面与第一和第二掺杂区域之间的距离小于衬底厚度的50％。 以这种方式，形成放大的光感测区域，通过该放大的光感测区域从表面的后表面产生的电子可以容易地到达像素。

公开(公告)号：US20070001100A1

公开(公告)日：2007-01-04

申请号：US11424286

申请日：2006-06-15

申请人： Tzu-Hsuan HSU ,  Shou-Gwo WUU ,  Dun-Nian YAUNG

发明人： Tzu-Hsuan HSU ,  Shou-Gwo WUU ,  Dun-Nian YAUNG

IPC分类号： H01L31/00

CPC分类号： H01L27/14625 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/1464 ,  H01L31/0216

摘要： The present disclosure provides a backside illuminated semiconductor device. The device includes a semiconductor substrate having a front surface and a back surface, a sensor element formed on the front surface of the semiconductor substrate, and a light reflective layer (LRL) disposed over the sensor element. The LRL is configured to reflect light directed towards the back surface and through the sensor element.

摘要翻译： 本公开提供了背面照明半导体器件。 该装置包括具有前表面和后表面的半导体衬底，形成在半导体衬底的前表面上的传感器元件和设置在传感器元件上的光反射层（LRL）。 LRL被配置为反射朝向后表面并通过传感器元件的光。

公开(公告)号：US20080079108A1

公开(公告)日：2008-04-03

申请号：US11774681

申请日：2007-07-09

申请人： Tzu-Hsuan HSU ,  Dun-Nian YAUNG

发明人： Tzu-Hsuan HSU ,  Dun-Nian YAUNG

IPC分类号： H01L31/00 ,  H01L21/02

CPC分类号： H01L27/14683 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/1464

摘要： A method for improving sensitivity of backside illuminated image sensor. A substrate having a first conductivity type and a first potential. A depletion region having a second conductivity type is formed within the substrate. The depletion region is extended. The thickness of the substrate is reduced. First type conductivity ions having a second potential are implanted at backside surface of the substrate to form a doping layer. Laser annealing on the doping layer is performed to activate the first type conductivity ions.

摘要翻译： 一种提高背面照明图像传感器灵敏度的方法。 具有第一导电类型和第一电位的衬底。 在衬底内形成具有第二导电类型的耗尽区。 耗尽区延长。 衬底的厚度减小。 将具有第二电位的第一类型电导率离子注入到衬底的背面以形成掺杂层。 执行掺杂层上的激光退火以激活第一类型的导电离子。