公开(公告)号：US20140327016A1

公开(公告)日：2014-11-06

申请号：US14338598

申请日：2014-07-23

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： PANKAJ B. SHAH ,  H. ALFRED HUNG

IPC: H01L29/93 ,  H01L29/872 ,  H01L29/16 ,  H01L29/66 ,  H01L29/22

CPC classification number: H01L29/93 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/22 ,  H01L29/66174 ,  H01L29/872

Abstract: A varactor comprising two Schottky diodes, each diode comprising a substrate and a plurality of layers formed on the substrate including at least one GaN layer and at least one semi-insulating material layer formed of a material with an energy gap greater than 3.5 and free carrier mobility less than 300 cm2/V-s; the Schottky diodes having cathodes adapted to be connected to an AC voltage input and being configured so that as the AC voltage applied to the cathodes increases the capacitance decreases nonlinearly, the nonlinear transition from high capacitance to low capacitance being adjustable by utilizing the intrinsic carrier concentration of the semi-insulating layer to obtain an optimal nonlinear transition for the predetermined AC voltage applied to the cathodes. A method of making a varactor comprising computer modeling to produce capacitance-voltage curves, modifying at least one semi-insulating region, and modeling power input/output efficiency for a predetermined input signal.

Abstract translation: 一种包括两个肖特基二极管的变容二极管，每个二极管包括衬底和形成在衬底上的多个层，包括至少一个GaN层和由能隙大于3.5的材料形成的至少一个半绝缘材料层和自由载体 迁移率小于300 cm2 / Vs; 肖特基二极管具有适于连接到AC电压输入的阴极并且被配置为使得随着施加到阴极的AC电压增加，电容非线性减小，从高电容到低电容的非线性转变可通过利用本征载流子浓度 以获得施加到阴极的预定AC电压的最佳非线性转变。 一种制造变容二极管的方法，包括计算机建模以产生电容 - 电压曲线，修改至少一个半绝缘区域，以及为预定输入信号建模功率输入/输出效率。

公开(公告)号：US20140239305A1

公开(公告)日：2014-08-28

申请号：US13774387

申请日：2013-02-22

Applicant: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I

Inventor： PANKAJ B. SHAH ,  H. ALFRED HUNG

IPC: H01L29/20 ,  G06F17/50

CPC classification number: H01L29/93 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/22 ,  H01L29/66174 ,  H01L29/872

Abstract: A preferred method of optimizing a Ga-nitride device material structure for a frequency multiplication device comprises: determining the amplitude and frequency of the input signal being multiplied in frequency; providing a Ga-nitride region on a substrate; determining the Al percentage composition and impurity doping in an AlGaN region positioned on the Ga-nitride region based upon the power level and waveform of the input signal and the desired frequency range in order to optimize power input/output efficiency; and selecting an orientation of N-face polar GaN or Ga-face polar GaN material relative to the AlGaN/GaN interface so as to orient the face of the GaN so as to optimize charge at the AlGaN/GaN interface. A preferred embodiment comprises an anti-serial Schottky varactor comprising: two Schottky diodes in anti-serial connection; each comprising at least one GaN layer designed based upon doping and thickness to improve the conversion efficiency.

Abstract translation: 优化用于倍频装置的Ga氮化物器件材料结构的优选方法包括：确定频率乘以的输入信号的幅度和频率; 在衬底上提供Ga氮化物区域; 基于输入信号的功率电平和波形以及期望的频率范围，确定位于Ga氮化物区域的AlGaN区域中的Al百分比组成和杂质掺杂，以优化功率输入/输出效率; 并且相对于AlGaN / GaN界面选择N面极化GaN或Ga面极化GaN材料的取向以便使GaN的表面定向，以便优化AlGaN / GaN界面处的电荷。 一个优选的实施方案包括抗串联肖特基变容二极管，其包含：反串联连接的两个肖特基二极管; 每个包括至少一个基于掺杂和厚度设计的GaN层以提高转换效率。