公开(公告)号：US20010007413A1

公开(公告)日：2001-07-12

申请号：US09754181

申请日：2001-01-03

Applicant: U.S. Philips Corporation

Inventor： Stephen J. Battersby

IPC: G09G003/10

CPC classification number: H01L27/3279 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2320/0209 ,  G09G2320/0223

Abstract: An active matrix electroluminescent display device (2) comprises an array of display pixels (4) arranged in rows (6) and columns (8). Each pixel (4) comprises a current-driven electroluminescent display element (10). Each row (6) of pixels (4) shares a common line (20), currents through the display elements (10) of a row (6) of pixels passing along the common line (20). The width of each common line (20) tapers from one end (20a) to the other (20b), the common line (20) being coupled to row driver circuitry at the wider end (20a). The resistance of the common lines is thus reduced at the end of the common line near to the row driver circuitry, where the current flowing is derived from all pixels within the row. The invention thereby reduces voltage drops along the common line, which contribute to cross-talk between pixels within a row.

Abstract translation: 有源矩阵电致发光显示装置（2）包括排列成行（6）和列（8）的显示像素阵列（4）。 每个像素（4）包括电流驱动的电致发光显示元件（10）。 像素（4）的每一行（6）共享公共线（20），通过沿公共线（20）通过的像素行（6）的显示元件（10）的电流。 每个公共线（20）的宽度从一端（20a）到另一端（20b）逐渐变细，公共线（20）在较宽端（20a）处耦合到行驱动器电路。 因此，公共线的电阻在行驱动器电路附近的公共线的末端减小，其中电流流动来自行内的所有像素。 因此，本发明减小沿着公共线的电压降，这有助于一行内的像素之间的串扰。

公开(公告)号：US20010008434A1

公开(公告)日：2001-07-19

申请号：US09728189

申请日：2000-12-01

Applicant: U.S. PHILIPS CORPORATION

Inventor： Stephen J. Battersby ,  Steven C. Deane

IPC: G02F001/1343 ,  G02F001/136

CPC classification number: G02F1/136213

Abstract: A transistor substrate for a liquid crystal display comprises an array of insulated-gate staggered TFTs and a capacitor (36) associated with each transistor. The gate insulator (400,420) comprises a first inorganic layer (400) and a second, polymer or spin-on glass layer (420), of which layers only the polymer or spin-on glass layer (420) extends to the capacitor (36) to define the capacitor dielectric.

Abstract translation: 用于液晶显示器的晶体管衬底包括绝缘栅极交错TFT阵列和与每个晶体管相关联的电容器（36）。 栅绝缘体（400,420）包括第一无机层（400）和第二聚合物或旋涂玻璃层（420），其中层仅仅聚合物或旋涂玻璃层（420）延伸到电容器（36） ）来定义电容器电介质。

公开(公告)号：US20040229411A1

公开(公告)日：2004-11-18

申请号：US10704250

申请日：2003-11-07

Applicant: U.S. PHILIPS CORPORATION

Inventor： Stephen J. Battersby

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L29/66757 ,  H01L29/78618 ,  H01L29/78633

Abstract: A method of producing a top gate thin-film transistor comprises the steps of forming doped silicon source and drain regions (6a,8a) on an insulating substrate (2) and subjecting the face of the substrate (2) on which the source and drain regions (6a,8a) are formed to plasma treatment to form a doped surface layer. An amorphous silicon layer (12) is formed on the doped surface layer over at least the spacing between the source and drain regions (6a,8a) and an insulated gate structure (14,16) is formed over the amorphous silicon layer (12). Laser annealing of areas of the amorphous silicon layer not shielded by the gate conductor is carried out to form polysilicon portions (12a,12b) having the impurities diffused therein. In the method of the invention, doped silicon source and drain regions underlie the silicon layer to be crystallized using the laser annealing process. It has been found that the laser annealing process can then result in crystallization of the full thickness of the amorphous silicon layer. This results from the similar thermal properties of the doped source and drain regions and the silicon layer defining the main body of the transistor.