公开(公告)号：US20240055239A1

公开(公告)日：2024-02-15

申请号：US18259151

申请日：2022-09-27

Applicant: ULVAC, INC.

Inventor： Yuta Ando ,  Akira Igari ,  Naoki Morimoto

IPC: H01J37/32 ,  H01L21/02 ,  H01J37/34 ,  C23C14/06 ,  C23C14/54

CPC classification number: H01J37/32697 ,  H01L21/0217 ,  H01L21/02266 ,  H01J37/32449 ,  H01J37/3426 ,  C23C14/0652 ,  C23C14/542 ,  H01J2237/332

Abstract: In a method in which inside a vacuum chamber, a silicon target and a to-be-deposited object are disposed in a positional relationship to face each other; a sputtering gas, containing therein nitrogen gas, is introduced into the vacuum chamber which is in a vacuum atmosphere; a negative potential is applied to the silicon target such that a silicon nitride film having a tensile stress is deposited in a reactive sputtering on a surface of the to-be-deposited object that is placed in an electrically floated state. The method includes steps: in which the to-be-deposited object is made to a state in which a bias potential is free from being applied thereto; and at least one of a flow ratio of the nitrogen gas to the sputtering gas, and the potential to be applied to the silicon target is controlled such that the surface of the silicon target can be maintained in a transition mode.