公开(公告)号：US11674217B2

公开(公告)日：2023-06-13

申请号：US16070094

申请日：2017-03-23

申请人： ULVAC, INC.

发明人： Junsuke Matsuzaki ,  Hirohisa Takahashi

IPC分类号： C23C14/56 ,  C23C14/18 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34 ,  H01L21/67 ,  H01L21/677 ,  H01L31/18 ,  C23C14/34 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/20

CPC分类号： C23C14/56 ,  C23C14/185 ,  C23C14/50 ,  H01J37/32899 ,  H01J37/3488 ,  H01L21/67173 ,  H01L21/67742 ,  H01L31/1864 ,  H01L31/1884 ,  C23C14/34 ,  H01L31/022475 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/202

摘要： A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

公开(公告)号：US10508332B2

公开(公告)日：2019-12-17

申请号：US15780886

申请日：2017-08-08

申请人： ULVAC, Inc.

发明人： Junsuke Matsuzaki ,  Hirohisa Takahashi

IPC分类号： C23C14/50 ,  C23C14/56 ,  H01L31/0747 ,  C23C14/34 ,  C23C14/54 ,  H01L31/20 ,  C23C14/04

摘要： The present invention provides a technique for performing film formation at low cost without causing a short-circuit between sputtered films formed on opposite surfaces of a film-formation target substrate. According to the present invention, in a substrate-holder conveyance mechanism 3, a substrate holder 11 is conveyed by a first conveyance portion so that the substrate holder 11 passes through a first film formation region; film formation is performed by sputtering on a first surface of a film-formation target substrate 50 held by the substrate holder 11; the substrate holder 11 is conveyed from the first conveyance portion to a second conveyance portion in such a manner as to make a turn with the up/down orientation of the substrate holder 11 maintained; the substrate holder 11 is conveyed by the second conveyance portion in a direction opposite to the direction of conveyance by the first conveyance portion so that the substrate holder 11 passes through a second film formation region; and film formation is performed by sputtering on a second surface of the film-formation target substrate 50. The substrate holder 11 has openings 14 and 15 through which first and second surfaces of the film-formation target substrate 50 are exposed, and includes a shield portion 16 for shielding an edge portion of the film-formation target substrate 50 from a film formation material supplied from a second sputtering source.