公开(公告)号：US20220056571A1

公开(公告)日：2022-02-24

申请号：US17273074

申请日：2020-07-09

Applicant: ULVAC, INC.

Inventor： Kengo Tsutsumi ,  Shinji Kohari ,  Kouji Sogabe ,  Toshimitsu Uehigashi ,  Takahiro Nanba

IPC: C23C14/00 ,  C23C14/06 ,  C23C14/54

Abstract: A film forming method is provided in which, when a dielectric film is formed by sputtering a target, the number of particles to get adhered to the surface of a to-be-processed substrate immediately after film formation can be decreased to the extent possible without impairing the function of effectively suppressing the induction of abnormal discharging. A film forming method, according to this invention, of forming a dielectric film on a surface of a to-be-processed substrate by sputtering a target inside a vacuum chamber includes: at the time of sputtering the target, applying negative potential to the target in the form of pulses; and a frequency of applying the negative potential in the form of pulses is set to a range of 100 kHz or more and 150 kHz or below and an application time (Ton) of the negative potential is set to a range of 5 μsec or longer and 8 μsec or shorter.