公开(公告)号：US3855110A

公开(公告)日：1974-12-17

申请号：US41631873

申请日：1973-11-15

申请人： UNITED AIRCRAFT CORP

发明人： QUINN D ,  PARADIS E

IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3277 ,  C23C14/35 ,  H01J37/34 ,  H01J37/342

摘要： A cylindrical cathode is used as a vacuum chamber to permit sputtering by means of an rf potential on all sides of a workpiece located coaxially within the chamber. Both insulators and conductors may be used as target materials and as workpieces. Even deposition of the sputtered material on long or continuously fed workpieces is achieved by properly terminating the ends of the coaxial sputtering chamber with grounded chambers of larger diameter than the sputtering chamber and of sufficient length to thereby gradually reduce the plasma density along the axial direction to a relatively small value before reaching the end walls.

摘要翻译： 使用圆柱形阴极作为真空室，以允许通过在室内同轴位于工件的所有侧面上的rf电势进行溅射。 绝缘体和导体都可以用作目标材料和工件。 溅射材料在长时间或连续供给的工件上的均匀沉积是通过适当地端接具有比溅射室直径大的接地室并具有足够长度的同轴溅射室的端部，从而沿着轴向方向逐渐降低等离子体密度 在到达端墙之前的价值相对较小。