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    HYBRID ION SOURCE FOR ALUMINUM ION GENERATION USING A TARGET HOLDER AND ORGANOALUMINIUM COMPOUNDS
    1.
    发明公开
    HYBRID ION SOURCE FOR ALUMINUM ION GENERATION USING A TARGET HOLDER AND ORGANOALUMINIUM COMPOUNDS 审中-公开

    公开(公告)号：US20230369006A1

    公开(公告)日：2023-11-16

    申请号：US17740848

    申请日：2022-05-10

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright ,  Shardul S. Patel

    IPC: H01J37/08 ,  H01J37/32 ,  H01J37/34

    CPC classification number: H01J37/08 ,  H01J37/32055 ,  H01J37/342 ,  H01J37/3426 ,  H01J37/3244 ,  H01J2237/08

    Abstract: An ion source that is capable of different modes of operation is disclosed. The ion source includes an insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder may a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. The ion source may have several gas inlets. When the insertable target holder is used, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may utilize an organoaluminium gas.

    MAGNETRON PLASMA APPARATUS
    6.
    发明申请
    MAGNETRON PLASMA APPARATUS 审中-公开
    MAGNETRON等离子体设备

    公开(公告)号：US20170047204A1

    公开(公告)日：2017-02-16

    申请号：US15335584

    申请日：2016-10-27

    Applicant: BB PLASMA DESIGN AB

    Inventor： Ladislav BARDOS ,  Hana BARANKOVA

    IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32

    CPC classification number: H01J37/3405 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/352 ,  H01J37/32596 ,  H01J37/3402 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3438 ,  H01J37/345

    Abstract: A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas.

    Abstract translation: 由空心阴极等离子体增强的磁控管等离子体装置包括至少一个电连接的一对第一中空阴极板和第二中空阴极板，该第一空心阴极板和第二中空阴极板以至少0.1mm的间隔距离彼此相对放置， 在磁控管靶上形成溅射侵蚀区，使得磁控管磁场在板之间的中空阴极狭缝内形成垂直的磁性部件，并且其中板与磁控管靶一起连接到第一发电机，以产生磁性 分散在中空阴极狭缝中的第一工作气体中的至少一个中的增强的空心阴极等离子体以及与在第一工作气体和第二工作气体中的至少一个中产生的磁控管等离子体接触的狭缝外部的第二工作气体。

    MULTI-SURFACE NANOPARTICLE SOURCES AND DEPOSITION SYSTEMS
    7.
    发明申请
    MULTI-SURFACE NANOPARTICLE SOURCES AND DEPOSITION SYSTEMS 审中-公开
    多表面纳米材料源和沉积系统

    公开(公告)号：US20150376772A1

    公开(公告)日：2015-12-31

    申请号：US14765284

    申请日：2014-01-31

    Applicant: REGENTS OF THE UNIVERSITY OF MINNESOTA

    Inventor： Jian-Ping Wang ,  Claire Hovland ,  Shihai He

    IPC: C23C14/34 ,  H01J37/34

    CPC classification number: C23C14/34 ,  B22F1/0018 ,  B22F1/02 ,  B22F1/025 ,  B22F9/12 ,  B22F2202/05 ,  B22F2998/10 ,  B22F2999/00 ,  C23C14/228 ,  C23C14/352 ,  H01J37/34 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  B22F9/04 ,  B22F3/003

    Abstract: A multi-surface nanoparticle source includes a first end having an inlet configured to receive a flow of gas, a second end comprising an outlet through which nanoparticles exit the nanoparticle source, and two or more targets spaced apart and arranged about an axis extending from the first end to the second end. At least at least one of the targets is hollow, and the inlet is arranged to direct a flow of the gas through the hollow target, between at least two of the targets, or both. The gas impacts the targets, releasing atoms from the target and through the second end. The targets may be arranged lengthwise and concentrically about the axis. In some cases, a multi-surface nanoparticle source includes one or more magnets. Nanoparticles formed with a multi-surface nanoparticle deposition system may be homogeneous or have a core-shell structure.

    Abstract translation: 多表面纳米颗粒源包括第一端，其具有构造成接收气流的入口，第二端包括纳米颗粒离开纳米颗粒源的出口，以及间隔开并且围绕从 第一端到第二端。 目标中的至少一个目标是中空的，并且入口布置成引导气体流通过中空目标，至少两个目标之间或两者。 气体会影响目标，释放出原子，并通过第二端。 靶可以纵向地并且围绕轴线同心地布置。 在一些情况下，多表面纳米颗粒源包括一个或多个磁体。 用多表面纳米颗粒沉积系统形成的纳米颗粒可以是均匀的或具有核 - 壳结构。

    IN-SITU SPUTTERING APPARATUS
    8.
    发明申请
    IN-SITU SPUTTERING APPARATUS 审中-公开
    现场飞溅设备

    公开(公告)号：US20140246311A1

    公开(公告)日：2014-09-04

    申请号：US13837756

    申请日：2013-03-15

    Applicant: POOLE VENTURA, INC.

    Inventor： Mark R. Erickson ,  Henry J. Poole ,  Arthur W. Custer, III ,  Nader Jamshidi ,  Ady Hershcovitch

    IPC: C23C14/35

    CPC classification number: C23C14/35 ,  H01J37/32394 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3488 ,  Y10T29/49002

    Abstract: A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and a cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provides power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.

    Abstract translation: 至少包括作为约束结构的内表面的靶的溅射装置，限制结构的内表面优选为圆管的内壁。 阴极靠近圆管的内壁设置。 阴极优选地提供中空芯，其中设置有磁控管。 优选地，致动器附接到磁控管，其中在激活致动器时磁控管在中空芯内的位置被改变。 此外，优选地提供支撑阴极并与靶连通的托架，并且与阴极相互作用并连接到电缆束拾取机构的电缆束向阴极，磁控管，致动器和溅射阳极提供电力和冷却剂 仪器。

    SPUTTERING DEVICE WITH A TUBULAR TARGET
    9.
    发明申请
    SPUTTERING DEVICE WITH A TUBULAR TARGET 审中-公开
    具有管状目标的喷射装置

    公开(公告)号：US20130299346A1

    公开(公告)日：2013-11-14

    申请号：US13817982

    申请日：2011-08-24

    Applicant: Armin Huebner ,  Hans-Juergen Heinrich

    Inventor： Armin Huebner ,  Hans-Juergen Heinrich

    IPC: C23C14/34

    CPC classification number: C23C14/3407 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3435

    Abstract: A sputtering device with a tubular target, includes a holding device with a supporting shaft having a shaft flange connected to the target tube detachably and in a water-tight manner by a clamping device. The end of the target tube facing the shaft flange of the supporting shaft is flangeless and a spacer ring is arranged detachably on the outer side of the tube in a predetermined position. The spacer ring is held by a form-fitting connection at a minimum distance from the end of the target tube. The clamping device includes the shaft flange of the supporting shaft, the spacer ring and a clamping ring which engages over the shaft flange and the spacer ring and comprises at least two pieces. At least one sealing element is arranged between the outer side and/or the end side of the target tube, and an opposite sealing face of the shaft flange.

    Abstract translation: 具有管状靶的溅射装置包括具有支撑轴的保持装置，该支撑轴具有通过夹紧装置可拆卸地以水密方式连接到目标管的轴凸缘。 目标管的面向支撑轴的轴凸缘的端部是无凸缘的，并且间隔环可拆卸地布置在管的外侧在预定位置。 隔离环通过与目标管的端部最小距离的形状配合连接来保持。 夹紧装置包括支撑轴的轴凸缘，间隔环和夹紧环，其夹紧在轴凸缘和间隔环上并且包括至少两个部件。 至少一个密封元件设置在目标管的外侧和/或端侧之间，以及轴凸缘的相对的密封面。

    SOFT SPUTTERING MAGNETRON SYSTEM
    10.
    发明申请
    SOFT SPUTTERING MAGNETRON SYSTEM 有权
    软质飞溅磁体系统

    公开(公告)号：US20130228452A1

    公开(公告)日：2013-09-05

    申请号：US13885905

    申请日：2011-11-17

    Applicant: Wilmert De Bosscher

    Inventor： Wilmert De Bosscher

    IPC: C23C14/35

    CPC classification number: C23C14/352 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/342

    Abstract: A sputtering method and apparatus having at least one set of dual rotatable cylindrical sputtering targets mounted in a vacuum chamber. Magnet assemblies in hollow target cylinders provide erosion zones running long the parallel sides of a racetrack that act as target flux sources towards a substrate. These parallel erosion zones have a highly concentrated plasma density for rapid sputtering of the target and any reactive material. Features include the angular distance between normals to adjacent parallel erosion zones, the angle greater than 45° subtended at the center of the cylindrical target, placement of the substrate with respect to the targets, and pointing angles (orientation or tilt) of the racetracks toward the substrate and/or each other. These parameters form a relatively wide and efficient constant flux deposition region at the substrate, and allows for high deposition rates at constant reactive gas partial pressures with substantially uniform film stoichiometry and thickness.

    Abstract translation: 一种溅射方法和装置，其具有安装在真空室中的至少一组双旋转圆柱形溅射靶。 空心目标圆柱体中的磁体组件提供腐蚀区域，该区域作为朝向基板的目标通量源的跑道的平行侧延伸。 这些平行侵蚀区域具有高浓度的等离子体密度，用于目标物和任何反应性材料的快速溅射。 特征包括法向与相邻平行侵蚀区域之间的角距离，在圆柱形目标的中心处对角度大于45°的角度，相对于目标物放置基板，以及将跑道的指向角度（取向或倾斜）朝向 基板和/或彼此。 这些参数在衬底上形成相对宽且有效的恒定焊剂沉积区域，并且在具有基本均匀的膜化学计量和厚度的恒定反应气体分压下允许高沉积速率。

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