公开(公告)号：US20140196251A1

公开(公告)日：2014-07-17

申请号：US13740254

申请日：2013-01-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： YINGJIE XU ,  Chaw Che ,  Yu-Yang Chen ,  Liang-Yong Tan ,  HAI YUAN ,  XIANYU MENG

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  C23C16/4405

Abstract: A semiconductor fabricating apparatus includes a reaction chamber, a first gas pipeline, and a second gas pipeline. The first gas pipeline includes a first cleaning gas pipeline for providing a first cleansing gas to the reaction chamber in a cleansing process, and a second cleansing gas pipeline for providing a second cleansing gas to the reaction chamber in the cleansing process. The first cleansing gas pipeline and the second cleansing gas pipeline are connected in parallel. The second gas pipeline provides a reactive gas to the reaction chamber in a fabricating process. The first gas pipeline and the second gas pipeline are connected in parallel.

Abstract translation: 半导体制造装置包括反应室，第一气体管道和第二气体管道。 第一气体管道包括用于在清洁过程中向反应室提供第一清洁气体的第一清洁气体管道和用于在清洁过程中向反应室提供第二清洗气体的第二清洁气体管道。 第一清洁气体管道和第二清洁气体管道并联连接。 第二气体管道在制造过程中向反应室提供反应气体。 第一气体管道和第二气体管道并联连接。