公开(公告)号：US20150095728A1

公开(公告)日：2015-04-02

申请号：US14040752

申请日：2013-09-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Pang Lu ,  Hsi-Wen Chen ,  Ya-Nan Mou ,  Chung-Cheng Tsai ,  Hsiao-Chieh Sung ,  Yin-Ju Hsiao

IPC: G11C29/00

CPC classification number: G11C29/04 ,  G11C29/006

Abstract: A testing method for non-volatile memory includes writing a first set of data to a set of addresses in a non-volatile memory, reading a second set of data from the set of addresses, and writing the first set of data to the set of addresses again if the first set of data and the second set of data are not identical and number of times for writing the first set of data to the set of addresses is smaller than a predetermined number.

Abstract translation: 用于非易失性存储器的测试方法包括将第一组数据写入非易失性存储器中的一组地址，从该地址集中读取第二组数据，以及将第一组数据写入到 如果第一组数据和第二组数据不相同，并且将第一组数据写入地址集合的次数小于预定数量，则再次寻址。