公开(公告)号：US09953880B1

公开(公告)日：2018-04-24

申请号：US15660991

申请日：2017-07-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Hao Lin ,  Hsin-yu Chen ,  Shou-Wei Hsieh

IPC: H01L29/76 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L21/823481 ,  H01L21/31144 ,  H01L21/76224 ,  H01L21/823475 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a gate layer on the fin-shaped structure and the STI; removing part of the gate layer, part of the fin-shaped structure, and part of the STI to form a trench; and forming a dielectric layer into the trench to form a single diffusion break (SDB) structure.