公开(公告)号：US20240081055A1

公开(公告)日：2024-03-07

申请号：US17953336

申请日：2022-09-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsuan-Kai Wang ,  Chao-Sheng Cheng ,  Chi-Cheng Huang

IPC: H01L27/11531 ,  H01L21/3105 ,  H01L21/8234 ,  H01L27/11521 ,  H01L27/11548

CPC classification number: H01L27/11531 ,  H01L21/31053 ,  H01L21/823437 ,  H01L27/11521 ,  H01L27/11548

Abstract: A semiconductor structure includes a substrate. The substrate is divided into a first element region, a second element region and a boundary region. The boundary region is disposed between the first element region and a second element region. A first mask structure covers the first element region. A second mask structure is disposed in the second element region. A logic gate structure is disposed within the second element region.