公开(公告)号：US09577069B1

公开(公告)日：2017-02-21

申请号：US15136982

申请日：2016-04-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Chieh Pu ,  Ping-Hung Chiang ,  Chang-Po Hsiung ,  Chia-Lin Wang ,  Nien-Chung Li ,  Wen-Fang Lee ,  Shih-Yin Hsiao ,  Chih-Chung Wang ,  Kuan-Lin Liu

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/308 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L21/02238 ,  H01L21/28123 ,  H01L21/3081 ,  H01L29/0649 ,  H01L29/66575 ,  H01L29/66681

Abstract: A method of fabricating a MOS device is disclosed. A substrate having an active area (AA) silicon portion and shallow trench isolation (STI) region surrounding the active area is provided. A hard mask is formed on the substrate. A portion of the hard mask is removed to form an opening on the AA silicon portion. The opening exposes an edge of the STI region. The AA silicon portion is recessed through the opening to a predetermined depth to form a silicon spacer along a sidewall of the STI region in a self-aligned manner. An oxidation process is performed to oxidize the AA silicon portion and the silicon spacer to form a gate oxide layer.

Abstract translation: 公开了制造MOS器件的方法。 提供了具有有源区（AA）硅部分和围绕有源区的浅沟槽隔离（STI）区的衬底。 在基板上形成硬掩模。 去除硬掩模的一部分以在AA硅部分上形成开口。 开口露出STI区域的边缘。 AA硅部分通过开口凹入预定深度，以自对准的方式沿着STI区域的侧壁形成硅间隔物。 进行氧化处理以氧化AA硅部分和硅间隔物以形成栅极氧化物层。