公开(公告)号：US10153342B1

公开(公告)日：2018-12-11

申请号：US15794065

申请日：2017-10-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wan-Xun He ,  Kui Mei ,  Su Xing

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/10 ,  H01L29/49 ,  H01L29/08

Abstract: A semiconductor device includes a substrate; an active layer disposed over the substrate and having a source region and a drain region; a contact region disposed over the substrate; a gate structure disposed over the active layer, wherein the gate structure includes a middle portion and a lateral portion connecting to the middle portion, and the lateral portion has a snake shape.