公开(公告)号：US10290641B1

公开(公告)日：2019-05-14

申请号：US15871920

申请日：2018-01-15

Applicant: United Microelectronics Corp.

Inventor： Wan-Xun He ,  Su Xing

IPC: H01L27/11 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/12

Abstract: A semiconductor device has a 6T SRAM cell formed on a substrate. The SRAM cell includes a first and a second PMOS transistors formed over an N-well line in a substrate. A first and a second NMOS transistors are formed over a first P-well line in the substrate at a first side of the N-well line. A third and a fourth NMOS transistors are formed over a second P-well line in the substrate at a second side of the N-well line. A first gate line connects gates of the first PMOS transistor and the first NMOS transistor. A second gate line connects a gate of the second NMOS transistor. A third gate line connects gates of the second PMOS transistor and the third NMOS transistor. A fourth gate line connects a gate of the fourth NMOS transistor. The first gate line and the third gate line are in L-shape.

公开(公告)号：US10153342B1

公开(公告)日：2018-12-11

申请号：US15794065

申请日：2017-10-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wan-Xun He ,  Kui Mei ,  Su Xing

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/10 ,  H01L29/49 ,  H01L29/08

Abstract: A semiconductor device includes a substrate; an active layer disposed over the substrate and having a source region and a drain region; a contact region disposed over the substrate; a gate structure disposed over the active layer, wherein the gate structure includes a middle portion and a lateral portion connecting to the middle portion, and the lateral portion has a snake shape.