公开(公告)号：US20250126889A1

公开(公告)日：2025-04-17

申请号：US18505094

申请日：2023-11-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： YUERAN QIAO ,  Yi Liu ,  Guohai Zhang ,  Genmao Liu ,  Lei Zhu

IPC: H01L27/12 ,  H01L21/84 ,  H01L29/78

Abstract: The invention provides a semiconductor structure comprising a silicon-on-insulator (SOI) substrate, which comprises a silicon layer and an insulating layer stacked from bottom to top, a phosphosilicate glass (PGS) on the insulating layer, and a fluorosilicate glass (FSG) on the phosphosilicate glass. The probability of ions infiltrating into the transistor can be reduced and the yield of products can be improved.