公开(公告)号：US12147155B2

公开(公告)日：2024-11-19

申请号：US17359687

申请日：2021-06-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Min-Cheng Yang ,  Chung-Yi Chiu

IPC: G03F1/36 ,  G03F7/00 ,  G06F30/27 ,  G06N5/04 ,  G06N20/00 ,  G06F119/18 ,  G06F119/22

Abstract: A mask correction method, a mask correction device for double patterning, and a training method for a layout machine learning model are provided. The mask correction method for double patterning includes the following steps. A target layout is obtained. The target layout is decomposed into two sub-layouts, which overlap at a stitch region. A size of the stitch region is analyzed by the layout machine learning model according to the target layout. The layout machine learning model is established according to a three-dimensional information after etching. An optical proximity correction (OPC) procedure is performed on the sub-layouts.