公开(公告)号：US11823746B2

公开(公告)日：2023-11-21

申请号：US17673829

申请日：2022-02-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Shan Ho ,  Ying-Ting Lin ,  Chung-Yi Luo ,  Kuo-Cheng Chou ,  Cheng-Hsiao Lai ,  Ming-Jen Chang ,  Yung-Tsai Hsu ,  Cheng-Chieh Cheng

IPC: G11C16/28 ,  G11C16/24 ,  G11C16/08 ,  G11C16/10

CPC classification number: G11C16/28 ,  G11C16/08 ,  G11C16/102 ,  G11C16/24

Abstract: A memory sector with trimmed reference currents, including eight unit cells corresponding to an even word line and eight unit cells corresponding to an odd word line, and each unit cell has erased state and programmed state, wherein the logic state of unit cell corresponding to the odd word line is determined by a first reference current based on cell currents of the 8 unit cells corresponding to the even word line in programmed state and cell currents of the eight unit cells corresponding to the odd word line in erased state, and the logic state of unit cell corresponding to the even word line is determined by a second reference current based on cell currents of the eight unit cells corresponding to the even word line in erased state and cell currents of the 8 unit cells corresponding to the odd word line in programmed state.

公开(公告)号：US20230223091A1

公开(公告)日：2023-07-13

申请号：US17673829

申请日：2022-02-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Shan Ho ,  Ying-Ting Lin ,  Chung-Yi Luo ,  Kuo-Cheng Chou ,  Cheng-Hsiao Lai ,  Ming-Jen Chang ,  Yung-Tsai Hsu ,  Cheng-Chieh Cheng

IPC: G11C16/28 ,  G11C16/10 ,  G11C16/08 ,  G11C16/24

CPC classification number: G11C16/28 ,  G11C16/102 ,  G11C16/08 ,  G11C16/24

Abstract: A memory sector with trimmed reference currents, including eight unit cells corresponding to an even word line and eight unit cells corresponding to an odd word line, and each unit cell has erased state and programmed state, wherein the logic state of unit cell corresponding to the odd word line is determined by a first reference current based on cell currents of the 8 unit cells corresponding to the even word line in programmed state and cell currents of the eight unit cells corresponding to the odd word line in erased state, and the logic state of unit cell corresponding to the even word line is determined by a second reference current based on cell currents of the eight unit cells corresponding to the even word line in erased state and cell currents of the 8 unit cells corresponding to the odd word line in programmed state.