公开(公告)号：US11322215B1

公开(公告)日：2022-05-03

申请号：US17326375

申请日：2021-05-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Pin Tsao ,  Tsung-Hsun Wu ,  Liang-Wei Chiu ,  Kuo-Hsing Lee ,  Sheng-Yuan Hsueh ,  Kun-Hsien Lee ,  Chang-Chien Wong

IPC: G11C17/14 ,  G11C17/16 ,  G11C17/18

Abstract: A one-time programmable (OTP) memory device includes a first memory cell, which further includes a first source line extending along a first direction on a substrate, a first word line extending along the first direction on one side of the first source line, a second word line extending along the first direction on another side of the first source line, a first diffusion region extending along a second direction adjacent to two sides of the first word line and the second word line, and a first metal interconnection connecting the first word line and the second word line.