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公开(公告)号:US20230195989A1
公开(公告)日:2023-06-22
申请号:US17574527
申请日:2022-01-12
Applicant: UNITED MICROELECTRONICS CORP.
Inventor: Pin-Yen Tsai , Yi-Jung Chang
IPC: G06F30/392 , G06N20/10
CPC classification number: G06F30/392 , G06N20/10
Abstract: The invention provides an operation method of a semiconductor system, which includes providing a system which includes a layout pattern to scanning electron microscope (SEM) pattern prediction model (LS model) and a novelty detection model (ND model), inputting a layout pattern to the ND model, and the ND model judges whether the layout pattern is a novel layout pattern, and if the layout pattern is confirmed as the novel layout pattern after judgment, performing a process step on the novel layout pattern to form an SEM (scanning electron microscope) pattern.
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公开(公告)号:US12032891B2
公开(公告)日:2024-07-09
申请号:US17574527
申请日:2022-01-12
Applicant: UNITED MICROELECTRONICS CORP.
Inventor: Pin-Yen Tsai , Yi-Jung Chang
IPC: G06F30/392 , G06N20/10
CPC classification number: G06F30/392 , G06N20/10
Abstract: The invention provides an operation method of a semiconductor system, which includes providing a system which includes a layout pattern to scanning electron microscope (SEM) pattern prediction model (LS model) and a novelty detection model (ND model), inputting a layout pattern to the ND model, and the ND model judges whether the layout pattern is a novel layout pattern, and if the layout pattern is confirmed as the novel layout pattern after judgment, performing a process step on the novel layout pattern to form an SEM (scanning electron microscope) pattern.
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公开(公告)号:US10762618B1
公开(公告)日:2020-09-01
申请号:US16275480
申请日:2019-02-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor: Pin-Yen Tsai , Hsu-Tang Liu , Yi-Jung Chang , Chun-Liang Hou
Abstract: A mask weak pattern recognition apparatus and a mask weak pattern recognition method are provided. The mask weak pattern recognition apparatus includes a receiving unit, an overlapping unit, an analyzing unit and a training unit. The receiving unit is used for receiving a mask layout and an inspection image of a mask. The overlapping unit is used for overlapping the mask layout and the inspection image to obtain an overlapped image. The analyzing unit is used for obtaining a plurality of risk patterns and a plurality of risk scores each of which corresponds one of the risk patterns according to the overlapped image. The training unit is used for training a recognition model according to the risk patterns and the risk scores.
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