公开(公告)号：US09431256B2

公开(公告)日：2016-08-30

申请号：US13939186

申请日：2013-07-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yuan Hsu ,  Zhen Chen ,  Chi Ren ,  Ching-Long Tsai ,  Wei Cheng ,  Ping Liu

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L29/788 ,  H01L27/115

CPC classification number: H01L21/28273 ,  H01L27/11521 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7881

Abstract: A method for manufacturing a semiconductor device includes the following steps. At first, two gate stack layers are formed on a semiconductor substrate, wherein each of the gate stack layers includes a top surface and two side surfaces. A conductive material layer is deposited to conformally cover the top surface and the two side surfaces of each of the gate stack layers. Then, a cap layer is deposited to conformally cover the conductive material layer. Finally, the cap layer and the conductive material layer above the top surface of each of the gate stack layers are removed to leave the cap layer adjacent to the two side surfaces of each of the gate stack layers and covering a portion of the conductive material layer.

Abstract translation: 一种制造半导体器件的方法包括以下步骤。 首先，在半导体衬底上形成两个栅极堆叠层，其中每个栅极堆叠层包括顶表面和两个侧表面。 沉积导电材料层以共形地覆盖每个栅极堆叠层的顶表面和两个侧表面。 然后，沉积覆盖层以覆盖导电材料层。 最后，去除盖层和每个栅极堆叠层的顶表面上方的导电材料层，以使覆盖层与每个栅极叠层层的两个侧表面相邻并且覆盖导电材料层的一部分 。