公开(公告)号：US20230403941A1

公开(公告)日：2023-12-14

申请号：US18238520

申请日：2023-08-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Po-kai Hsu ,  Hung-Yueh Chen ,  Yu-Ping Wang

IPC: H10N50/01 ,  H10N50/80

CPC classification number: H10N50/01 ,  H10N50/80 ,  H10B61/00

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to and directly contacting the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is a single layer structure made of dielectric material and an edge of the cap layer contacts the first IMD layer directly.