公开(公告)号：US20220165895A1

公开(公告)日：2022-05-26

申请号：US17137300

申请日：2020-12-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhaoyao Zhan ,  QIANWEI DING ,  XIAOHONG JIANG ,  CHING HWA TEY

IPC: H01L31/032 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/028

Abstract: The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.

公开(公告)号：US20230076390A1

公开(公告)日：2023-03-09

申请号：US17984261

申请日：2022-11-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhaoyao Zhan ,  QIANWEI DING ,  XIAOHONG JIANG ,  CHING HWA TEY

IPC: H01L27/146

Abstract: A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a heterojunction photodiode.

公开(公告)号：US20210384231A1

公开(公告)日：2021-12-09

申请号：US16931400

申请日：2020-07-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhaoyao Zhan ,  QIANWEI DING ,  XIAOHONG JIANG ,  CHING HWA TEY

IPC: H01L27/146

Abstract: A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a photodiode.

公开(公告)号：US20230071411A1

公开(公告)日：2023-03-09

申请号：US17984243

申请日：2022-11-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhaoyao Zhan ,  QIANWEI DING ,  XIAOHONG JIANG ,  CHING HWA TEY

IPC: H01L27/146

Abstract: A method for forming a photosensitive device includes the steps of providing an integrated circuit structure having a first pad and a second pad exposed from a surface of the integrated circuit structure, forming a first material layer on the surface of the integrated circuit structure, patterning the first material layer to expose the second pad, forming a second material layer on the first material layer and covering the second pad, and patterning the second material.

公开(公告)号：US20230225139A1

公开(公告)日：2023-07-13

申请号：US18122718

申请日：2023-03-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhaoyao Zhan ,  QIANWEI DING ,  XIAOHONG JIANG ,  CHING HWA TEY

IPC: H10K39/32 ,  H10K85/50

CPC classification number: H10K39/32 ,  H10K85/50

Abstract: The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer