Invention Application
- Patent Title: Image sensor and manufacturing method thereof
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Application No.: US17137300Application Date: 2020-12-29
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Publication No.: US20220165895A1Publication Date: 2022-05-26
- Inventor: Zhaoyao Zhan , QIANWEI DING , XIAOHONG JIANG , CHING HWA TEY
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202011318904.0 20201123
- Main IPC: H01L31/032
- IPC: H01L31/032 ; H01L27/146 ; H01L31/0352 ; H01L31/028

Abstract:
The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.
Public/Granted literature
- US11641000B2 Image sensor and manufacturing method thereof Public/Granted day:2023-05-02
Information query
IPC分类: