公开(公告)号：US20240014323A1

公开(公告)日：2024-01-11

申请号：US17903072

申请日：2022-09-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chen-Wei PAN ,  Sheng CHO

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/06 ,  H01L29/08 ,  H01L21/8234

CPC classification number: H01L29/7851 ,  H01L29/66795 ,  H01L27/0688 ,  H01L29/0847 ,  H01L21/823431 ,  H01L21/823418

Abstract: A semiconductor device includes a substrate; a fin structure disposed over the substrate; a gate structure disposed over the substrate, wherein an extension direction of the fin structure intersects an extension direction of the gate structure; and a first well disposed under the gate structure, corresponding to an emitter region of the semiconductor device, and having a first conductivity type, wherein the first well is adjacent to a well block layer, and the well block layer is disposed under the gate structure in the emitter region; wherein the well block layer has a first doping concentration of a well implant, the first well has a second doping concentration of the well implant, and the first doping concentration is less than the second doping concentration.