公开(公告)号：US20240234505A1

公开(公告)日：2024-07-11

申请号：US18105887

申请日：2023-02-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsu Ting ,  Kuang-Hsiu Chen ,  Shou-Hung Wu ,  Shao-Wei Wang ,  Yu-Ren Wang

IPC: H01L29/08 ,  H01L21/02 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes a fin structure disposed on a substrate, and an epitaxial semiconductor layer disposed over an upper part of the fin structure and having an undercut. The epitaxial semiconductor layer has a right-left symmetric, concave polygonal cross-section.