公开(公告)号：US09093473B2

公开(公告)日：2015-07-28

申请号：US14331229

申请日：2014-07-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Te Wei ,  Wen-Chen Wu ,  Lung-En Kuo ,  Po-Chao Tsao

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/66689 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/7816 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor substrate adjacent to two sides of the gate pattern; and performing a second photo-etching process on the gate pattern to form a slot in the gate pattern while using the gate pattern to physically separate the gate pattern into two gates.

Abstract translation: 公开了一种用于制造金属氧化物半导体（MOS）晶体管的方法。 该方法包括以下步骤：提供半导体衬底; 在所述半导体衬底上形成硅层; 在硅层上进行第一光蚀刻工艺以形成栅极图案; 在与栅极图案的两侧相邻的半导体衬底中形成外延层; 以及对所述栅极图案执行第二光蚀刻处理以在所述栅极图案中形成槽，同时使用所述栅极图案将所述栅极图案物理分离成两个栅极。

公开(公告)号：US20140322883A1

公开(公告)日：2014-10-30

申请号：US14331229

申请日：2014-07-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Te Wei ,  Wen-Chen Wu ,  Lung-En Kuo ,  Po-Chao Tsao

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66689 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/7816 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor substrate adjacent to two sides of the gate pattern; and performing a second photo-etching process on the gate pattern to form a slot in the gate pattern while using the gate pattern to physically separate the gate pattern into two gates.

Abstract translation: 公开了一种用于制造金属氧化物半导体（MOS）晶体管的方法。 该方法包括以下步骤：提供半导体衬底; 在所述半导体衬底上形成硅层; 在硅层上进行第一光蚀刻工艺以形成栅极图案; 在与栅极图案的两侧相邻的半导体衬底中形成外延层; 以及对所述栅极图案执行第二光蚀刻处理以在所述栅极图案中形成槽，同时使用所述栅极图案将所述栅极图案物理分离成两个栅极。