公开(公告)号：US20250056781A1

公开(公告)日：2025-02-13

申请号：US18367471

申请日：2023-09-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Lin Chen ,  Tsung-Hsun Wu ,  Liang-Wei Chiu ,  Yao-Chin Cheng

IPC: H10B10/00

Abstract: A layout pattern of static random-access memory (SRAM) includes a substrate, a plurality of diffusion regions and a plurality of gate structures are located on the substrate, each diffusion region includes a first diffusion region, a second diffusion region, a third diffusion region, a fourth diffusion region, a fifth diffusion region, a sixth diffusion region, a seventh diffusion region and an eighth diffusion region, and each gate structure spans the plurality of diffusion regions. The plurality of gate structures include a first gate structure, the first gate structure includes a first L-shaped portion, which spans the first diffusion region and the fifth diffusion region and forms a first pull-down transistor (PD1), the first diffusion region is adjacent to and in direct contact with the fifth diffusion region.