公开(公告)号：US20230402288A1

公开(公告)日：2023-12-14

申请号：US17857158

申请日：2022-07-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yeh-Sheng Lin ,  Chang-Mao Wang ,  Chun-Chi Yu ,  Chung-Yi Chiu

IPC: H01L21/311 ,  H01L21/768

CPC classification number: H01L21/31111 ,  H01L21/76802 ,  H01L21/31144

Abstract: A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is removed to form a step height disposed directly on the gate structure. Subsequently, a wet etching is performed to remove the step height. After the step height is removed, the dielectric layer is etched to form a first contact hole to expose the gate structure.

公开(公告)号：US12211699B2

公开(公告)日：2025-01-28

申请号：US17857158

申请日：2022-07-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yeh-Sheng Lin ,  Chang-Mao Wang ,  Chun-Chi Yu ,  Chung-Yi Chiu

IPC: H01L21/311 ,  H01L21/768

Abstract: A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is removed to form a step height disposed directly on the gate structure. Subsequently, a wet etching is performed to remove the step height. After the step height is removed, the dielectric layer is etched to form a first contact hole to expose the gate structure.