公开(公告)号：US20250017022A1

公开(公告)日：2025-01-09

申请号：US18888142

申请日：2024-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Yi-AN Shih ,  Bin-Siang Tsai ,  Fu-Yu Tsai

IPC: H10B61/00 ,  H10N50/01 ,  H10N50/80

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a top electrode on the MTJ, forming an inter-metal dielectric (IMD) layer around the top electrode and the MTJ, forming a landing layer on the IMD layer and the MTJ, and then patterning the landing layer to form a landing pad. Preferably, the landing pad is disposed on the top electrode and the IMD layer adjacent to one side of the top electrode.