公开(公告)号：US20250017024A1

公开(公告)日：2025-01-09

申请号：US18231448

申请日：2023-08-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-An HUANG ,  Shu-Hung YU ,  Chuan-Fu WANG

IPC: H10B63/00

Abstract: A semiconductor structure is provided. The semiconductor structure includes a plurality of interconnection layers disposed along a first direction, a memory element in the plurality of interconnection layers, a first conductive structure in the plurality of interconnection layers and electrically connected to the memory element, and a second conductive structure in the plurality of interconnection layers and electrically connected to the memory element. The first conductive structure includes a first conductive line and a second conductive line disposed along the first direction. The second conductive structure includes a third conductive line and a fourth conductive line disposed along the first direction. The second conductive line and the memory element are in the same interconnection layer. The third conductive line and the fourth conductive line are above the first conductive line and the second conductive line.