公开(公告)号：US20170186607A1

公开(公告)日：2017-06-29

申请号：US14981854

申请日：2015-12-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ting Kuo ,  Shih-Jung Tu ,  Chun-Liang Chen ,  Po-Lun Cheng

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/3205

CPC classification number: H01L21/28202 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/7833

Abstract: The method of forming a semiconductor device is provided. A substrate having an exposed oxide layer is provided. A nitridation process is performed for the oxide layer. After the nitridation process, a plasma treatment containing an inert gas is performed for the oxide layer. A conductive layer is formed on the oxide layer.