公开(公告)号：US20150255307A1

公开(公告)日：2015-09-10

申请号：US14722174

申请日：2015-05-27

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Kun-Hsien LIN ,  Hsin-Fu HUANG ,  Chi-Mao HSU ,  Chin-Fu LIN ,  Chun-Yuan WU

IPC: H01L21/311 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L21/31144 ,  H01L21/28008 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/78

Abstract: A manufacturing process of an etch stop layer is provided. The manufacturing process includes steps of providing a substrate; forming a gate stack structure over the substrate, wherein the gate stack structure at least comprises a dummy polysilicon layer and a barrier layer; removing the dummy polysilicon layer to define a trench and expose a surface of the barrier layer; forming a repair layer on the surface of the barrier layer and an inner wall of the trench; and forming an etch stop layer on the repair layer. In addition, a manufacturing process of the gate stack structure with the etch stop layer further includes of forming an N-type work function metal layer on the etch stop layer within the trench, and forming a gate layer on the N-type work function metal layer within the trench.

Abstract translation: 提供蚀刻停止层的制造工艺。 制造方法包括提供基板的步骤; 在所述衬底上形成栅极叠层结构，其中所述栅极堆叠结构至少包括虚设多晶硅层和阻挡层; 去除所述虚设多晶硅层以限定沟槽并暴露所述阻挡层的表面; 在阻挡层的表面和沟槽的内壁上形成修复层; 以及在修复层上形成蚀刻停止层。 此外，具有蚀刻停止层的栅极堆叠结构的制造工艺还包括在沟槽内的蚀刻停止层上形成N型功函数金属层，并且在N型功函数金属上形成栅极层 沟内的层。