公开(公告)号：US20140312407A1

公开(公告)日：2014-10-23

申请号：US13867125

申请日：2013-04-22

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chih-Haw LEE ,  Tzu-Ping CHEN

IPC: H01L29/792 ,  H01L29/66

CPC classification number: H01L29/792 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/66833

Abstract: A nonvolatile memory device comprises a substrate, a gate electrode, a single charge trapping sidewall and a source/drain region. The gate electrode is disposed on and electrically isolated from the substrate. The single charge trapping sidewall is disposed adjacent to a sidewall of the gate electrode and electrically isolated from the substrate and the gate electrode, so as to form a non-straight angle between the substrate and the single charge trapping sidewall. The source/drain region is disposed in the substrate and adjacent to the gate electrode.

Abstract translation: 非易失性存储器件包括衬底，栅电极，单电荷俘获侧壁和源/漏区。 栅电极设置在基板上并与基板电隔离。 单电荷捕获侧壁邻近栅电极的侧壁设置并与衬底和栅电极电隔离，从而在衬底和单电荷俘获侧壁之间形成非直角。 源极/漏极区域设置在衬底中并且与栅电极相邻。