公开(公告)号：US20130264585A1

公开(公告)日：2013-10-10

申请号：US13907980

申请日：2013-06-03

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chin-I LIAO ,  Ching-Hong JIANG ,  Ching-I LI ,  Shu-Yen CHAN ,  Chin-Cheng CHIEN

IPC: H01L29/78

CPC classification number: H01L29/7842 ,  H01L21/3247 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a recess and a stress-providing structure. A channel structure is formed in the substrate. The recess is formed in the substrate and arranged beside the channel structure. The recess has a round inner surface. The stress-providing structure is formed within the recess. Corresponding to the profile of the round inner surface of the recess, the stress-providing structure has a round outer surface.

Abstract translation: 提供半导体器件。 半导体器件包括衬底，凹部和应力提供结构。 在衬底中形成沟道结构。 凹槽形成在衬底中并且布置在通道结构旁边。 凹槽具有圆形的内表面。 应力提供结构形成在凹部内。 对应于凹部的圆形内表面的轮廓，应力提供结构具有圆形外表面。