公开(公告)号：US20130087810A1

公开(公告)日：2013-04-11

申请号：US13689720

申请日：2012-11-29

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Teng-Chun TSAI ,  Chun-Yuan WU ,  Chin-Fu LIN ,  Chih-Chien LIU ,  Chin-Cheng CHIEN

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7833

Abstract: A fin field-effect transistor structure comprises a substrate, a fin channel, a source/drain region, a high-k metal gate and a plurality of slot contact structures. The fin channel is formed on the substrate. The source/drain region is formed in the fin channel. The high-k metal gate formed on the substrate and the fin channel comprises a high-k dielectric layer and a metal gate layer, wherein the high-k dielectric layer is arranged between the metal gate layer and the fin channel. The slot contact structures are disposed at both sides of the metal gate.

Abstract translation: 鳍状场效应晶体管结构包括衬底，鳍状沟道，源极/漏极区域，高k金属栅极和多个狭槽接触结构。 翅片通道形成在基板上。 源极/漏极区域形成在鳍状沟道中。 形成在基板和鳍状沟道上的高k金属栅包括高k电介质层和金属栅极层，其中高k电介质层布置在金属栅极层和鳍状沟之间。 槽接触结构设置在金属门的两侧。

公开(公告)号：US20130089957A1

公开(公告)日：2013-04-11

申请号：US13693009

申请日：2012-12-03

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Teng-Chun TSAI ,  Chun-Yuan WU ,  Chin-Fu LIN ,  Chih-Chien LIU ,  Chin-Cheng CHIEN

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7833

Abstract: A fin field-effect transistor structure includes a substrate, a fin channel and a high-k metal gate. The high-k metal gate is formed on the substrate and the fin channel. A process of manufacturing the fin field-effect transistor structure includes the following steps. Firstly, a polysilicon pseudo gate structure is formed on the substrate and a surface of the fin channel. By using the polysilicon pseudo gate structure as a mask, a source/drain region is formed in the fin channel. After the polysilicon pseudo gate structure is removed, a high-k dielectric layer and a metal gate layer are successively formed. Afterwards, a planarization process is performed on the substrate having the metal gate layer until the first dielectric layer is exposed, so that a high-k metal gate is produced.

Abstract translation: 鳍状场效应晶体管结构包括衬底，鳍状沟道和高k金属栅极。 高k金属栅极形成在基板和鳍状通道上。 制造鳍式场效应晶体管结构的工艺包括以下步骤。 首先，在基板和散热片通道的表面上形成多晶硅伪栅极结构。 通过使用多晶硅伪栅极结构作为掩模，在鳍式沟道中形成源/漏区。 在去除多晶硅伪栅极结构之后，依次形成高k电介质层和金属栅极层。 然后，在具有金属栅极层的基板上进行平坦化处理，直到第一介电层露出为止，从而产生高k金属栅极。

公开(公告)号：US20130264585A1

公开(公告)日：2013-10-10

申请号：US13907980

申请日：2013-06-03

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chin-I LIAO ,  Ching-Hong JIANG ,  Ching-I LI ,  Shu-Yen CHAN ,  Chin-Cheng CHIEN

IPC: H01L29/78

CPC classification number: H01L29/7842 ,  H01L21/3247 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a recess and a stress-providing structure. A channel structure is formed in the substrate. The recess is formed in the substrate and arranged beside the channel structure. The recess has a round inner surface. The stress-providing structure is formed within the recess. Corresponding to the profile of the round inner surface of the recess, the stress-providing structure has a round outer surface.

Abstract translation: 提供半导体器件。 半导体器件包括衬底，凹部和应力提供结构。 在衬底中形成沟道结构。 凹槽形成在衬底中并且布置在通道结构旁边。 凹槽具有圆形的内表面。 应力提供结构形成在凹部内。 对应于凹部的圆形内表面的轮廓，应力提供结构具有圆形外表面。