公开(公告)号：US09793105B1

公开(公告)日：2017-10-17

申请号：US15225829

申请日：2016-08-02

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chun-Wei Yu ,  Hsu Ting ,  Chueh-Yang Liu ,  Yu-Ren Wang ,  Kuang-Hsiu Chen ,  Yi-Liang Ye

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088

CPC classification number: H01L21/02063 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L27/0886 ,  H01L29/6653

Abstract: The invention provides a fabricating method of a FinFET, comprising: providing a substrate having fin structures; depositing an dielectric layer on the substrate filling between the fin structures; forming recesses to reveal a portion of the fin structure by removing a portion of the dielectric layer; performing a cleaning process on using a cleaning solution selected from one of a first solution, consisting of dHF and H2O2, and a second solution, consisting of dHF and DIO3; forming a gate structure across on the fin structures; and forming a source/drain structure on the substrate at two lateral sides of the gate structure. The present invention also provides a fabricating method of a FinFET having an improved cleaning step using a cleaning solution having one of a third solution, consisting of dHF and DIO3, and a fourth solution, consisting of NH4OH and DIO3 before formation of the source/drain structure.