公开(公告)号：US20140216504A1

公开(公告)日：2014-08-07

申请号：US13760068

申请日：2013-02-06

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Jun XIA ,  Hui LU ,  Li-Sen QIAN ,  Chee-Wei TAN

IPC: B08B3/04

CPC classification number: H01L21/02071 ,  H01L21/02052

Abstract: A silicon wafer cleaning method is provided. Firstly, a silicon wafer is provided. Then, a polymer cleaning step is performed to clean a surface of the silicon wafer. After the polymer cleaning step, a deionized water/carbon dioxide gas discharging step is performed, so that the charges accumulated on the surface of the silicon wafer can be instantly removed. After the deionized water/carbon dioxide gas discharging step, two or more particle removing steps are performed. In addition, an air-jet step is performed during the time interval between every two sub-steps of a single particle removing step. Consequently, the cleaning efficiency of removing the particles will be enhanced.

Abstract translation: 提供硅晶片清洗方法。 首先，提供硅晶片。 然后，进行聚合物清洗工序，清洗硅晶片的表面。 聚合物清洗工序后，进行去离子水/二氧化碳气体排出工序，能够立即除去积聚在硅晶片表面的电荷。 在去离子水/二氧化碳气体排出步骤之后，进行两个以上的除尘步骤。 此外，在单个颗粒除去步骤的每两个子步骤之间的时间间隔期间进行喷气步骤。 因此，除去微粒的清洗效率提高。